Abstract:This study investigated the effect of hydrogen (H) on the performance of amorphous In-Ga-Zn-Sn oxide (a-In0.29Ga0.35Zn0.11Sn0.25O) thin-film transistors (TFTs). Ample H in plasma-enhanced atomic layer deposition (PEALD)-derived SiO2 can diffuse into the underlying a-IGZTO film during the postdeposition annealing (PDA) process, which affects the electrical properties of the resulting TFTs due to its donor behavior in the a-IGZTO. The a-In0.29Ga0.35Zn0.11Sn0.25O TFTs at the PDA temperature of 400 °C exhibited a remarkably higher field-effect mobility (μFE) of 85.9 cm2/Vs, a subthreshold gate swing (SS) of 0.33 V/decade, a threshold voltage (VTH) of -0.49 V, and an ION/OFF ratio of ∼108; these values are superior compared to those of unpassivated a-In0.29Ga0.35Zn0.11Sn0.25O TFTs (μFE = 23.3 cm2/Vs, SS = 0.36 V/decade, and VTH = -3.33 V). In addition, the passivated a-In0.29Ga0.35Zn0.11Sn0.25O TFTs had good stability against the external gate bias duration. This performance change can be attributed to the substitutional H doping into oxygen sites (HO) leading to a boost in ne and μFE. In contrast, the beneficial HO effect was barely observed for amorphous indium gallium zinc oxide (a-IGZO) TFTs, suggesting that the hydrogen-doping-enabled boosting of a-IGZTO TFTs is strongly related to the existence of Sn cations. Electronic calculations of VO and HO using density functional theory (DFT) were performed to explain this disparity. The introduction of SnO2 in a-IGZO is predicted to cause a conversion from shallow VO to deep VO due to the lower formation energy of deep VO, which is effectively created around Sn cations. The formation of HO by H doping in the IGZTO facilitates the efficient connection of atomic states forming the conduction band more smoothly. This reduces the effective mass and enhances the carrier mobility.

Role of H<sub>2</sub>O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors

Role of H 2 O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors

9.2: Mechanism of H<sub>2</sub>O‐induced Instability of Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs

H2o Adsorption on Amorphous In-Ga-Zn-O Thin-Film Transistors under Negative Bias Stress

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Hydrogen Incorporation Modulates Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors

Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment

Hydrogen-Related Instability of IGZO Field-Effect Transistors

Multiple effects of hydrogen on InGaZnO thin-film transistor and the hydrogenation-resistibility enhancement

Abnormal Bias Instabilities Induced by Lateral H2O Diffusion into Top-Gate Insulator of A-Ingazno Thin-Film Transistors

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors

Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience

Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors

High-mobility InSnZnO Thin Film Transistors via Introducing Water Vapor Sputtering Gas

Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down Via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Influence Of Passivation Layers On Positive Gate Bias-Stress Stability Of Amorphous Ingazno Thin-Film Transistors

Investigation of the Anomalous Hump Phenomenon in Amorphous InGaZnO Thin-Film Transistors

Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates

Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering

Sputtered oxides used for passivation layers of amorphous InGaZnO thin film transistors