High-mobility InSnZnO Thin Film Transistors via Introducing Water Vapor Sputtering Gas

Ting Li,Xiaohan Liu,Junyan Ren,Peixuan Hu,Yujia Qian,Tingting Jin,Jingting Sun,Zhipeng Chen,Lingyan Liang,Hongtao Cao
DOI: https://doi.org/10.1021/acsami.3c17894
IF: 9.5
2024-06-08
ACS Applied Materials & Interfaces
Abstract:There is always a doubt that introducing water during oxide growing has a positive or negative effect on the properties of oxide films and devices. Herein, a comparison experiment on the condition of keeping the same oxygen atom flux in the sputtering chamber is designed to examine the influences of H(2)O on In-Sn-Zn-O (ITZO) films and their transistors. In comparison to no-water films, numerous unstable hydrogen-related defects are induced on with-water films at the as-deposited state....
materials science, multidisciplinary,nanoscience & nanotechnology
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