Abstract:A design concept of carrier transport/relaxation bilayer amorphous‐oxide‐semiconductor TFTs is demonstrated to avoid the bucket effect inevitable in single‐layer devices. In&Sn‐rich InSnZnO/InSnZnO:Pr bilayer TFTs that combine high mobility (75.5 cm2 V−1 s−1), robust normalized drain current (225 μA), and satisfactory NBIS/PBTS stability (voltage shift ∼ −1.64/0.76 V) are successfully developed. Amorphous oxide semiconductor thin‐film transistors (AOS TFTs) are ever‐increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility‐stability conflict. The charge transport layer (CTL) is made of amorphous In‐rich InSnZnO, which favors big average effective coordination number for all cations and more edge‐shared structures for better charge transport. Praseodymium‐doped InSnZnO is used as the charge relaxation layer (CRL), which substantially shortens the photoelectron lifetime as revealed by femtosecond transient absorption spectroscopy. The CTL and CRL with the thickness suitable for industrial production respectively afford minute potential barrier fluctuation for charge transport and fast relaxation for photo‐generated carriers, resulting in transistors with an ultrahigh mobility (75.5 cm2 V−1 s−1) and small negative‐bias‐illumination‐stress/positive‐bias‐temperature‐stress voltage shifts (−1.64/0.76 V). The design concept provides a promising route to address the mobility‐stability conflict for high‐end displays.

Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs

Influence of Source and Drain Contacts on the Properties of the Indium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

Effect of Source/drain Preparation on the Performance of Oxide Thin-Film Transistors

Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

High mobility and hysteresis free InGaSnO thin film transistors by co-sputtering via low temperature post annealing process

Effect of Source/ Drain Electrode Fabrication Technology on the Electrical Properties of Solution-processed A-IGZO Based Transistors

Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors

Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors

Mobility–stability trade-off in oxide thin-film transistors

Mobility Enhancement In Amorphous In-Ga-Zn-O Thin-Film Transistor By Induced Metallic In Nanoparticles And Cu Electrodes

Effects of Sn Doping on the Electrical Performance and Stability of Sub-V Operating Metal-Oxide Thin-Film Transistors Fabricated by Oxygen Annealing

Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

Influence of Source and Drain Contacts on the Properties of Indium-Gallium Zinc-Oxide Thin-Film Transistors Based on Amorphous Carbon Nanofilm As Barrier Layer

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Influence of Source and Drain Electrodes on Device Performance of ZnO Thin Film Transistors

Strategy toward High-Mobility Oxide Semiconductor Thin-Film Transistors by Atomic Layer Deposition

Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method

Significant Degradation Reduction in Metal Oxide Thin-Film Transistors via the Interaction of Ionized Oxygen Vacancy Redistribution, Self-Heating Effect, and Hot Carrier Effect

Effect of oxygen defect on the performance of Nd: InZnO high mobility thin-film transistors

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors