Abstract:Low-temperature solution-processed InGaZnO (IGZO) thin film transistors (TFTs) have recently attracted significant attention as the next-generation flexible display TFTs, owing to their high transparency, high electrical performance, low-cost fabrication, and large-area scalability. However, solution-processed amorphous IGZO TFTs have several drawbacks, such as poor film quality or low stability, and have been studied with view to improving the device performance. One of the critical components determining device characteristics is the metallization process, which we systematically studied using aluminum (Al) source and drain electrodes. The electrical properties were measured for different channel lengths and evaluated using the threshold voltage (Vth) and subthreshold swing (SS). Al electrodes directly affect the channel region, enhancing the electron density because of the doping effect from Al and oxygen vacancy-related oxidation of Al and causing an abnormal negative shift ofVth, which is confirmed by the component analysis via various spectroscopies. To understand and improve the TFT characteristics, we conducted a low-temperature post-annealing process and polymer passivation and succeeded in movingVthfrom over 150 V to near 0 V and remarkably improved SS. This study discovered that the influence of source-drain metallization on the channel region determines the device characteristics through the close relation between metal oxidation and the number of oxygen vacancies.

Effect of Source/ Drain Electrode Fabrication Technology on the Electrical Properties of Solution-processed A-IGZO Based Transistors

Effect of Source/Drain Electrodes on the Electrical Properties of Silicon–Tin Oxide Thin-Film Transistors

Influence of Source and Drain Contacts on the Properties of the Indium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

Effect of Source/drain Preparation on the Performance of Oxide Thin-Film Transistors

Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors

P-1.13: Influence of the Source/Drain Material on Oxide Semiconductor Thin Film Transistors

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

Influence of Source and Drain Contacts on the Properties of Indium-Gallium Zinc-Oxide Thin-Film Transistors Based on Amorphous Carbon Nanofilm As Barrier Layer

Impact of electrode materials on the performance of amorphous IGZO thin-film transistors

Influence of Source and Drain Electrodes on Device Performance of ZnO Thin Film Transistors

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs

Influence of metallization process on solution-processed InGaZnO thin film transistors

The Source/Drain Resistance Of A-Igzo Tft

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

The Effect Of Device Electrode Geometry On Performance After Hot-Carrier Stress In Amorphous In-Ga-Zn-O Thin Film Transistors With Different Via-Contact Structures

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.

Gate Insulator Influences on the Electrical Performance of Back-Channel-Etch Amorphous Zinc Tin Oxide (A-Zto) Thin Film Transistors

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors