Abstract:Fully transparent indium gallium zinc oxide thin film transistors (IGZO TFTs) on glass substrate were fabricated by radio frequency magnetron sputtering at room temperature. The influence of oxygen plasma treatment technology on the characteristics of IGZO TFTs were analyzed. Before growing the source/drain electrodes, different power of oxygen plasma were used to treat the surface of the source/drain region. The experiment results suggest that the plasma treatment can improve the performance of device. Compared with the control group, the TFTs with O2 plasma treatment for 10 seconds and power of 150W show a better performance. The Ion/Ioff ratio was increased by an order of magnitude from 2.67×10 4 to 2.1×105, and the saturation mobility (μsat) was doubled from 0.54 cm 2 V -1 s -1 to 1.1cm 2 V -1 s -1 . The sub-threshold swing (SS) is 0.42V/dec, and Ion/Ioff ratio is 2.1×10 5 .

Impact of electrode materials on the performance of amorphous IGZO thin-film transistors

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Indium–gallium–zinc–oxide Thin-Film Transistors:Materials,devices, and Applications

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

Effect of Source/ Drain Electrode Fabrication Technology on the Electrical Properties of Solution-processed A-IGZO Based Transistors

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

P-1.13: Influence of the Source/Drain Material on Oxide Semiconductor Thin Film Transistors

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes

Present status of amorphous In–Ga–Zn–O thin-film transistors

Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering