Abstract:Magnesium (Mg)-induced metallization of amorphous indium-gallium-zinc-oxide (a-IGZO) films is investigated to develop a self-aligned (SA) top-gate (SATG) a-IGZO thin-film transistor (TFT) technology. The high-conductive and SA a-IGZO source/drain (S/D) regions are well realized by a short time of sputtered deposition of Mg onto the a-IGZO film on a heated substrate, followed by the removal of the spare Mg on the surface in hot water. It is shown that the resistivity of the a-IGZO films is lowered to about <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4 \times 10^{-{3}}\,\,\Omega $ </tex-math></inline-formula> cm from over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{4}}~\Omega $ </tex-math></inline-formula> cm with a 36-s Mg deposition at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$300~^{\circ }\text{C}$ </tex-math></inline-formula> . The metallization effect is believed to be the consequence of a large number of donor-like defects (oxygen vacancies) generated by oxidation–reduction reaction at the interface between the Mg and a-IGZO films. The SATG a-IGZO TFTs fabricated by the proposed technology show excellent electrical characteristics, such as a field-effect mobility of 19.5 cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{{2}}\text{V}^{-{1}}\text{s}^{-{1}}$ </tex-math></inline-formula> , a subthreshold swing of 0.19 V/dec, an ON-/ OFF-current ratio of over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{9}}$ </tex-math></inline-formula> , a low S/D series resistance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.1~\Omega $ </tex-math></inline-formula> cm, a small channel length shrinking of around <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.1~\mu \text{m}$ </tex-math></inline-formula> , and a high stability against electrical stresses.

The Source/Drain Resistance Of A-Igzo Tft

Analysis of the contact resistance in amorphous InGaZnO thin film transistors

Influence of Source and Drain Contacts on the Properties of the Indium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

P‐1.11: Relationship Between Effective Mobility and Source/Drain Resistance in Self‐Aligned Top‐Gate A‐igzo Thin Film Transistors

Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain Regions

Source-drain Resistance Characteristics of Back-Channel Etched Amorphous InGaZnO Thin Film Transistors with TiO 2 :Nb Protective Layer

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Influence of Source and Drain Contacts on the Properties of Indium-Gallium Zinc-Oxide Thin-Film Transistors Based on Amorphous Carbon Nanofilm As Barrier Layer

P-1.13: Influence of the Source/Drain Material on Oxide Semiconductor Thin Film Transistors

Effect of Source/ Drain Electrode Fabrication Technology on the Electrical Properties of Solution-processed A-IGZO Based Transistors

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Impact of electrode materials on the performance of amorphous IGZO thin-film transistors

Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain

A-Igzo TFTs with Inductively Coupled Plasma Chemical Vapor Deposited ${\rm SiO}_{x}$ Gate Dielectric

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

Electrical And Photosensitive Characteristics Of A-Igzo Tfts Related To Oxygen Vacancy

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 degrees C

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C

A Bottom-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistor With an Inherent Etch-Stop and Annealing-Induced Source and Drain Regions

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts