Role of H 2 O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors

Yu-Chieh Chien,Ting-Chang Chang,Hsiao-Cheng Chiang,Hua-Mao Chen,Yu-Ching Tsao,Chih-Cheng Shih,Bo-Wei Chen,Po-Yung Liao,Ting-Yang Chu,Yi-Chieh Yang,Yu-Ju Hung,Tsung-Ming Tsai,Kuan-Chang Chang
DOI: https://doi.org/10.1109/LED.2017.2666198
IF: 4.8157
2017-01-01
IEEE Electron Device Letters
Abstract:This letter analyzes performance and reliability of inverted staggered type amorphous indium-gallium-zinc oxide devices in a moist environment with H2O molecules in the passivation layer. There is a negative threshold voltage shift (Δ Vth) in the saturation region (VD = 10 V), which increases with decreasing channel length. We propose that this is explained by the drain-induced barrier lowering th...
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