Abstract:Roles of oxygen interstitial defects located in the In-Ga-Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic ellipsometry analysis that the excess oxygens increased with increasing the In contents within the IGZO channels. While the device using the IGZO channel with an In/Ga ratio of 0.2 did not show marked differences with the variations in the oxidant types during the gate-stack formation, the device characteristics were severely deteriorated with increasing the In/Ga ratio to 1.4, when the Al2O3 gate insulator (GI) was prepared with the H2O oxidants (H2O-Al2O3) due to a higher amount of excess oxygen in the channel. Additionally, during the deposition process of the Al-doped ZnO (AZO) gate electrode (GE) replacing from the indium-tin oxide (ITO) GE, the thermal annealing effect at 180 °C facilitated the passivation of oxygen vacancy and the strengthening of metal-oxygen bonding, which could stabilize the TFT operations. From these results, the gate-stack structure employing O3-processed Al2O3 GI (O3-Al2O3) and AZO GE (OA) was suggested to be most suitable for the device using IGZO channel with a higher In content. On the other hand, the device employing H2O-Al2O3 GI and AZO GE exhibited larger negative shifts of threshold voltage (VTH) under positive-bias-temperature stress (PBTS) condition than the device employing O3- Al2O3 GI and ITO GE due to larger hydrogen contents within the gate stacks. Anomalous negative shifts of VTH were accelerated with increasing the In contents of the IGZO channel. When the channel length of the fabricated device were scaled down to submicrometer regime, the OA gate stacks successfully alleviated the short-channel effects.

Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down Via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors

Enhancing IGZO Thin Film Transistor Scalability Through Tunneling Contact

Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs

Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

Optimizing Length Scalability of InGaZnO Thin‐Film Transistors through Lateral Carrier Profile Engineering and Negative ΔL Extension Structure

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors

Effect of source–drain contact and channel length on the performance of vertical thin-film transistors

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

A Bottom-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistor With an Inherent Etch-Stop and Annealing-Induced Source and Drain Regions

Contact Length Scaling in Dual-Gate IGZO TFTs

Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors