Abstract:In this work, we report on back-end-of-line (BEOL)-compatible InGaZnO indium gallium zinc oxide (IGZO) thin film transistors (TFTs) with extreme scaled device dimension including channel thickness ( $\textit{T}_{\text{ch}}\text{)}$ down to 1.5 nm and channel length ( $\textit{L}_{\text{ch}}\text{)}$ down to 60 nm. These IGZO channels with a high In atomic ratio of 92% were derived by atomic-layer-deposition (ALD), where the IGZO thickness could be precisely controlled by ALD cycles. These TFTs were subjected to a mild O $_{\text{2}}$ annealing at 250 $^{\circ}$ C, the effect of which is also systematically investigated. It is found that both $\textit{T}_{\text{ch}}$ and O $_{\text{2}}$ annealing have significant effects on TFT performance. By using optimized O $_{\text{2}}$ annealing conditions, the ALD IGZO TFTs with scaled $\textit{T}_{\text{ch}}$ of 1.5 nm and $\textit{L}_{\text{ch}}$ of 60 nm exhibit desirable electrical performance including a high ON/OFF ratio ( $\textit{I}_{\biosc{on}}$ / $\textit{I}_{\biosc{off}}\text{)}$ $\sim$ 10 $^{\text{11}}$ , a decent high Ion of 354 $\mu$ A/ $\mu$ m under $\textit{V}_{\text{DS}}$ of 1.2 V, a steep subthreshold swing (SS) of 68 mV/dec, a small drain-induced-barrier-lowering (DIBL) of 30 mV/V, and a normal-off operation, which is comparable to the state-of-art sputtered IGZO TFTs. Furthermore, the optimized TFTs also exhibit significantly resolved threshold voltage ( $\textit{V}_{\text{T}}\text{)}$ roll-off and a remarkably high degree of stability to the positive gate bias stress (PBS). A trap model with its possible microscopic origin is proposed, which explains well the dependence of electrical performance on both $\textit{T}_{\text{ch}}$ and O $_{\text{2}}$ annealing, thus providing a new insight into the reliability of IGZO TFTs.

Contact Length Scaling in Dual-Gate IGZO TFTs

Enhancing IGZO Thin Film Transistor Scalability Through Tunneling Contact

Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 degrees C

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C

Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down Via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Optimizing Length Scalability of InGaZnO Thin‐Film Transistors through Lateral Carrier Profile Engineering and Negative ΔL Extension Structure

Evolution of Enhanced Performance of a-IGZO TFTs With Cu/Al-Based Contacts

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness

BEOL-Compatible High-Performance A-Igzo Transistors with Record High Ids,max = 1207 Μa/μm and On-off Ratio Exceeding 1011 at Vds = 1V

Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering

P-1.14: The Influence of Dual-channel on the Performance of Self-Align Top-Gate IGZO Thin Film Transistors

Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)

A New Surface Potential and Physics Based Compact Model for A-Igzo TFTs at Multinanoscale for High Retention and Low-Power DRAM Application

Influence of Source and Drain Contacts on the Properties of Indium-Gallium Zinc-Oxide Thin-Film Transistors Based on Amorphous Carbon Nanofilm As Barrier Layer

Amorphous In-Ga-Zn-O Thin-Film Transistors Fabricated by Microcontact Printing

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method