Abstract:The electrical and optical stability of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) related to the channel composition (the concentration of oxygen vacancy, V-O(2+)) and gate dielectrics are discussed. With the filling of V-O(2+), the electron density (Ne) in a-IGZO decreases from 7.5 to 3.8 (x10(16)cm(-3)) with the increase of Fermi level and decrease of density of deep charged traps, and therefore the electrical stability of TFTs decreases from A Vth of 4.5 to 10V. The optical stability of a-IGZO TFTs is also sensitive to the V-O(2+). With the increase of V-O(2+) the absorption increases and Eg decreases for a-IGZO, therefore the number of generating photoelectrons increases and the stability of TFT. decreases. The SiNx-gated TFT shows good electrical stability, but its optical stability is an issue, which shows a larger off-state photo leakage current (Delta I-d similar to 13 mu A) and decrease of Vth (vertical bar Delta V-th vertical bar>14V) than those of the SiO2-gated TFT (Delta I-d similar to 12 nA, vertical bar Delta V-th vertical bar similar to 8V). The model of charge trapping at the interface of gate dielectric/a-IGZO is only valid for the mechanism of electrical stability. It is proposed that due to the larger absorption of visible light of SiNX gate dielectric, and the smaller Delta Ev between SiNX and a-IGZO film, the photo created holes carriers in a-IGZO.chginel can be injected more easily into SiNX during light on resulting a significant increase of N-e in a-IGZO, therefore an apparent decrease of V-th for TFT.

Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Floating Top Gate-Induced Output Enhancement Of A-Ingazno Thin Film Transistors Under Single Gate Operations

Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics

Influence of White Light Illumination on the Performance of A-Igzo Thin Film Transistor under Positive Gate-Bias Stress

Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down Via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Impact of interfacial trap density of states on the stability of amorphous InGaZnO-based thin-film transistors

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress

Effects of Ultraviolet Light on the Dual-Sweep $I$ – $V$ Curve of A-Ingazno 4 Thin-Film Transistor

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics

Gate Insulator Influences on the Electrical Performance of Back-Channel-Etch Amorphous Zinc Tin Oxide (A-Zto) Thin Film Transistors

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

Performance and Stability of Amorphous Ingazno Thin Film Transistors with A Designed Device Structure

Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance

Investigating an abnormal hump phenomenon in top gate a-InGaZnO thin-film transistors due to mobile sodium diffusion