Abstract:In recent years, the remarkable properties and potential applications of III-nitride (III-N) semiconductors have sparked a significant interest in the field of microelectromechanical systems (MEMS). Traditionally, III-N MEMS are fabricated through a process involving the epitaxial growth of III-N epilayers on a silicon substrate followed by etching the handle wafer to generate free-standing structures. In this study, we explore the potential of a relatively simple approach based on the two-dimensional (2D) material-based liftoff and transfer to fabricate III-N mechanical resonators. The methodology involves van der Waals epitaxy of III-N layers on 2D hexagonal-boron nitride (h-BN), which leverages the weak van der Waals adhesion between h-BN layers to lift off and transfer these layers from their original growth substrate to an alternative host substrate. The employed method is demonstrated by fabricating 600 nm thick GaN/AlGaN and 2.5 μm thick h-BN micro-resonators onto pre-patterned cavities etched in silicon substrates. These devices are characterized using laser Doppler vibrometry, enabling the observation of well-defined modes of vibration and resonant frequencies. Furthermore, finite element method simulations are performed to gain insights into the experimental observations and the mechanical properties of the transferred layers. This approach could be extended to transfer high-quality III-N MEMS devices onto various host substrates, including flexible substrates, and could be used to assess the mechanical properties of emerging III-N semiconductor materials.

Gan on Patterned Silicon (gps) Technique for Fabrication of Gan-Based Mems

Fabrication of suspending gan microstructures with combinations of anisotropic and isotropic dry etching techniques

Fabrication of GaN-based MEMS Structures Using Dry-Etch Technique

SiN-masked GaN-on-patterned-silicon (GPS) Technique for Fabrication of Suspended GaN Microstructures

GaN on Patterned Silicon (GPS) Technique for GaN-based Integrated Microsensors

Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform

Fabrication of Position-controllable GaN Nanostructures

Fabrication Of Vertical Position-Controllable Gan Nanowires On (111) Si Substrate

Study of GaN Epilayers Growth on Freestanding Si Cantilevers

Polymer bonding of GaN crystal layer on silicon substrate for micro mechanical resonator applications

Transfer of III-nitride epitaxial layers onto pre-patterned silicon substrates for the simple fabrication of free-standing MEMS

Fabrication of Gallium Nitride Nanowires by Metal-Assisted Photochemical Etching

A Self-Assembled Graphene Nanomask For The Epitaxial Growth Of Nonplanar And Planar Gan

Lateral Epitaxial Overgrowth of GaN Films on Patterned Sapphire Substrates Fabricated by Wet Chemical Etching

Fabricating Processes Of Free-Standing Silicon Nitride Thin Film For Mems Devices

High-Efficiency and High-Quality Photogalvanic Etching of the Silicon Doped N-Type Gallium Nitride Using Potassium Peroxomonosulfate Oxidant

Guided-Mode Resonances in Gan Membrane Grating

Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics

Micro-electro-mechanical Systems Fast Fabrication by Selective Thick Polysilicon Growth in Epitaxial Reactor

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

Gan-On-Silicon Integration Technology