Abstract:Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Evolutionary Growth Strategy of GaN on (1 1 1) Diamond Modulated by Nano-Patterned Buffer Engineering

Polycrystalline Diamond Film Growth on Gallium Nitride with Low Boundary Thermal Resistance

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Alignment Control and Atomically-Scaled Heteroepitaxial Interface Study of GaN Nanowires.

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Polarity-induced selective area epitaxy of GaN nanowires

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD

NV-doped microstructures with preferential orientation by growth on heteroepitaxial diamond

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Polarity Control of Heteroepitaxial GaN Nanowires on Diamond

Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

The enhanced GaN deposition on highly N-incorporated diamond substrate

Crystallographic Alignment of High Density Gallium Nitride Nanowire Arrays

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN