Abstract:As the demand for high-frequency and high-power electronic devices has increased, gallium nitride (GaN), particularly in the context of high-electron mobility transistors (HEMTs), has attracted considerable attention. However, the 'self-heating effect' of GaN HEMTs represents a significant limitation regarding both performance and reliability. Diamond, renowned for its exceptional thermal conductivity, represents an optimal material for thermal management in HEMTs. This paper proposes a novel method for directly depositing diamond films onto N-polar GaN (NP-GaN) epitaxial layers. This eliminates the complexities of the traditional diamond growth process and the need for temporary substrate steps. Given the relative lag in the development of N-polar material growth technologies, which are marked by surface roughness issues, and the recognition that the thermal boundary resistance (TBRGaN/diamond) represents a critical factor constraining efficient heat transfer, our study has introduced a series of optimizations to enhance the quality of the diamond nucleation layer while ensuring that the integrity of the GaN buffer layer remains intact. Moreover, chemical mechanical polishing (CMP) technology was employed to effectively reduce the surface roughness of the NP-GaN base, thereby providing a more favorable foundation for diamond growth. The optimization trends observed in the thermal performance test results are encouraging. Integrating diamond films onto highly smooth NP-GaN epitaxial layers demonstrates a reduction in TBRGaN/diamond compared to that of diamond layers deposited onto NP-GaN with higher surface roughness that had undergone no prior process treatment.

High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD

Polycrystalline Diamond Film Growth on Gallium Nitride with Low Boundary Thermal Resistance

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

High quality GaN films on miscut (1 1 1) diamond substrates through non-c orientation suppression

The enhanced GaN deposition on highly N-incorporated diamond substrate

Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure

Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance

Integration of polycrystalline diamond heat spreader with AlGaN/GaN HEMTs using a dry/wet combined etching process

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates