Abstract:The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating which degrades device performance and reliability. With generated heat fluxes within these devices reaching magnitude close to ten times of that at the sun surface, chemical vapor deposition (CVD) diamond is an attractive candidate to aid in the extraction of this heat in order to keep the operating temperatures of these high power electronics as low as possible. Due to the observed inhomogeneous structure, CVD diamond membranes exhibit a 3D anisotropic thermal conductivity which may result in significantly different cooling performance from expected in a given application. In this work, time domain thermoreflectance (TDTR) is used to measure the thermal properties of an 11.8-{\mu}m CVD diamond membrane from its nucleation side. Starting with a spot size diameter larger than the thickness of the membrane, measurements are made at various modulation frequencies from 1.2 MHz to 11.6 MHz to tune the heat penetration depth, and subsequently the part of diamond sampled by TDTR. We divide the membrane into ten sublayers and assume isotropic thermal conductivity in each sublayer. From this, we observe a 2D gradient of the depth-dependent thermal conductivity for this membrane. By measuring the same region with a smaller spot size at multiple frequencies, the in-plane and cross-plane thermal conductivity are extracted respectively. Through this use of multiple spot sizes and modulation frequencies, the 3D anisotropic thermal conductivity of CVD diamond membrane is experimentally obtained by fitting the experimental data to a thermal model. This work provides insight toward an improved understanding of heat conduction inhomogeneity in CVD polycrystalline diamond membrane that is important for applications of thermal management of high power electronics.

Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN

AlN As Interlayer for Effective Thermal Dissipation from Gallium Nitride to CVD Diamond Using Nanocrystalline Diamond Seeding

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Polycrystalline Diamond Film Growth on Gallium Nitride with Low Boundary Thermal Resistance

Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry

Modulating microstructure and thermal properties of diamond/SiN x /GaN multilayer structure by diamond growth temperature

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD

Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling.

Superconducting Diamond on Silicon Nitride for Device Applications

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

Integration of polycrystalline diamond heat spreader with AlGaN/GaN HEMTs using a dry/wet combined etching process

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer

A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance

Probing Growth-Induced Anisotropic Thermal Transport in CVD Diamond Membranes by Multi-frequency and Multi-spot-size Time-Domain Thermoreflectance

Thick adherent diamond films on AlN with low thermal barrier resistance