Modulating microstructure and thermal properties of diamond/SiN x /GaN multilayer structure by diamond growth temperature
Guoliang Ma,Yiming Wang,Ruikai Xia,Biwei Meng,Shengchao Yuan,Bing Zhou,Chao Yuan
DOI: https://doi.org/10.1016/j.diamond.2023.110717
IF: 3.806
2023-12-16
Diamond and Related Materials
Abstract:Numerous growth conditions affect thermal properties in diamond/SiN x /GaN multilayer structures, where diamond growth temperature is an important parameter and has not been adequately studied in the past. This article studies the relationship between the microstructure and thermal properties of diamond/SiN x /GaN multilayer structures under different diamond growth temperatures (740 °C–860 °C). The thermal boundary resistance of the diamond/GaN (TBR eff, Dia/GaN ) and thermal conductivity of the diamond ( k Diamond ) are measured using transient thermoreflectance (TTR). The lowest TBR eff, Dia/GaN and highest k Diamond are achieved simultaneously at a growth temperature of 800 °C, and the difference in TBR eff, Dia/GaN and k Diamond at different temperatures is up to 3–4 times. At the low growth temperature (740 °C), the thick transition layer is formed due to the insufficient ability of etching amorphous carbon and a significant carbon diffusion, resulting in significantly increased TBR eff, Dia/GaN . At the high growth temperature (860 °C), the lattice distortion of GaN at the interface and the graphite phase in the transition layer contributed to the increase of TBR eff, Dia/GaN . The thin diamond layer thickness and secondary nucleation result in low k Diamond except for 800 °C. The device simulation using the experimental k Diamond and TBR eff, Dia/GaN at 800 °C predicts a 23 % reduction in maximum device temperature ( T max ) when the surface of GaN HEMTs is grown with a thin diamond layer.
materials science, multidisciplinary,physics, applied, condensed matter, coatings & films