Abstract:The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications, such as wireless communication and radar systems. However, the performance and reliability of GaN-based high-electron-mobility transistors (HEMTs) are limited by the high channel temperature induced by Joule heating in the device channel. Integration of GaN with high thermal conductivity substrates can improve the heat extraction from GaN-based HEMTs and lower the operating temperature of the device. However, heterogeneous integration of GaN with diamond substrates presents technical challenges to maximize the heat dissipation potential brought by the ultrahigh thermal conductivity of diamond substrates. In this work, two modified room-temperature surface-activated bonding (SAB) techniques are used to bond GaN and single-crystal diamond. Time-domain thermoreflectance (TDTR) is used to measure the thermal properties from room temperature to 480 K. A relatively large thermal boundary conductance (TBC) of the GaN/diamond interfaces with a ∼4 nm interlayer (∼90 MW/(m<sup>2</sup> K)) was observed and material characterization was performed to link the interfacial structure with the TBC. Device modeling shows that the measured TBC of the bonded GaN/diamond interfaces can enable high-power GaN devices by taking full advantage of the ultrahigh thermal conductivity of single-crystal diamond. For the modeled devices, the power density of GaN-on-diamond can reach values ∼2.5 times higher than that of GaN-on-SiC and ∼5.4 times higher than that of GaN-on-Si with a maximum device temperature of 250 °C. Our work sheds light on the potential for room-temperature heterogeneous integration of semiconductors with diamond for applications of electronics cooling, especially for GaN-on-diamond devices.

High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Impacts of diamond heat spreader on the thermo-mechanical characteristics of high-power AlGaN/GaN HEMTs

B13-P-01Temperature Characterization of Self-heating in GaN-based Transistors by Cathodeluminescence Spectroscopy

A Temperature Analysis of High-power AlGaN/GaN HEMTs

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

Thermal Resistance Extraction of AlGaN/GaN Depletion-Mode HEMTs on Diamond

Experimental Assessment of Self-Heating in Algan/Gan Hemts for Microwave Application

Study of Self-heating on AlGaN/GaN HEMTs Grown on Sapphire Substrate

Characterization of Self-Heating in GaN High Electron Mobility Transistors Using Channel Resistance Measurement

FEM Thermal Analysis of High Power GaN-on-diamond HEMTs

Study on the Reliability of AlGaN/GaN HEMTs at High Temperature

Temperature-dependent microwave noise characteristics of AlGaN/GaN HEMTs on silicon substrate

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Thermal Analysis of AlGaN/GaN HEMTs Considering Anisotropic And Inhomogeneous Thermal Conductivity

Simulation Investigation of Effects of Substrate and Thermal Boundary Resistance on Performances of AlGaN/GaN HEMTs

Measuring Temperature in GaN-based High Electron Mobility Transistors by Cathodoluminescence Spectroscopy

Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices

Thermal Characteristics of GaN-on-diamond HEMTs: Impact of Anisotropic and Inhomogeneous Thermal Conductivity of Polycrystalline Diamond