Abstract:The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications, such as wireless communication and radar systems. However, the performance and reliability of GaN-based high-electron-mobility transistors (HEMTs) are limited by the high channel temperature induced by Joule heating in the device channel. Integration of GaN with high thermal conductivity substrates can improve the heat extraction from GaN-based HEMTs and lower the operating temperature of the device. However, heterogeneous integration of GaN with diamond substrates presents technical challenges to maximize the heat dissipation potential brought by the ultrahigh thermal conductivity of diamond substrates. In this work, two modified room-temperature surface-activated bonding (SAB) techniques are used to bond GaN and single-crystal diamond. Time-domain thermoreflectance (TDTR) is used to measure the thermal properties from room temperature to 480 K. A relatively large thermal boundary conductance (TBC) of the GaN/diamond interfaces with a ∼4 nm interlayer (∼90 MW/(m<sup>2</sup> K)) was observed and material characterization was performed to link the interfacial structure with the TBC. Device modeling shows that the measured TBC of the bonded GaN/diamond interfaces can enable high-power GaN devices by taking full advantage of the ultrahigh thermal conductivity of single-crystal diamond. For the modeled devices, the power density of GaN-on-diamond can reach values ∼2.5 times higher than that of GaN-on-SiC and ∼5.4 times higher than that of GaN-on-Si with a maximum device temperature of 250 °C. Our work sheds light on the potential for room-temperature heterogeneous integration of semiconductors with diamond for applications of electronics cooling, especially for GaN-on-diamond devices.

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

Modulation of Multidomain in AlGaN/GaN HEMT-Like Planar Gunn Diode

Physical-Based Simulation Of The Gan-Based Grooved-Anode Planar Gunn Diode

The Enhancement of the Output Characteristics in the GaN Based Multiple‐channel Planar Gunn Diode

Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode

Temperature Effect on the Submicron AlGaN/GaN Gunn Diodes for Terahertz Frequency

The Modulation of Multi-Domain and Harmonic Wave in a GaN Planar Gunn Diode by Recess Layer

Design and Manufacture of Planar GaAs Gunn Diode for Millimeter Wave Application

FEM Thermal Analysis of High Power GaN-on-diamond HEMTs

A Temperature Analysis of High-power AlGaN/GaN HEMTs

Improved Negative Differential Mobility Model of Gan and Algan for A Terahertz Gunn Diode

A High-performance U-band GaAs Gunn Diode

Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

A numerical analysis on the thermal effect in GaN based Gunn diode

A New Lattice-Matched In0.17Al0.83N ∼ GaN Based Heterostructure IMPATT Diode for Terahertz Application

Theoretical Analysis of AlGaN/GaN Resonant Tunnelling Diodes with Step Heterojunctions Spacer and Sub-Quantum Well

Study of THz Oscillations in GaN-Based Planar Nanodevices

Comparative analysis of nano-scale structural and electrical properties in AlGaN/GaN high electron mobility transistors on SiC and sapphire substrates.

Simulation Investigation of Multiple Domain Observed in In0.23Ga0.77As Planar Gunn Diode

Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices