Abstract:The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications, such as wireless communication and radar systems. However, the performance and reliability of GaN-based high-electron-mobility transistors (HEMTs) are limited by the high channel temperature induced by Joule heating in the device channel. Integration of GaN with high thermal conductivity substrates can improve the heat extraction from GaN-based HEMTs and lower the operating temperature of the device. However, heterogeneous integration of GaN with diamond substrates presents technical challenges to maximize the heat dissipation potential brought by the ultrahigh thermal conductivity of diamond substrates. In this work, two modified room-temperature surface-activated bonding (SAB) techniques are used to bond GaN and single-crystal diamond. Time-domain thermoreflectance (TDTR) is used to measure the thermal properties from room temperature to 480 K. A relatively large thermal boundary conductance (TBC) of the GaN/diamond interfaces with a ∼4 nm interlayer (∼90 MW/(m<sup>2</sup> K)) was observed and material characterization was performed to link the interfacial structure with the TBC. Device modeling shows that the measured TBC of the bonded GaN/diamond interfaces can enable high-power GaN devices by taking full advantage of the ultrahigh thermal conductivity of single-crystal diamond. For the modeled devices, the power density of GaN-on-diamond can reach values ∼2.5 times higher than that of GaN-on-SiC and ∼5.4 times higher than that of GaN-on-Si with a maximum device temperature of 250 °C. Our work sheds light on the potential for room-temperature heterogeneous integration of semiconductors with diamond for applications of electronics cooling, especially for GaN-on-diamond devices.

Enhanced Heat Dissipation of GaN RF Devices Based on Double-diamond Structure

Impacts of diamond heat spreader on the thermo-mechanical characteristics of high-power AlGaN/GaN HEMTs

A Simulation of Thermal Management Using a Diamond Substrate with Nanostructures

Improvement of Thermal Dissipation of GaN-Based Micro Cavity Light-Emitting Devices

Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices

A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance

Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Integration of polycrystalline diamond heat spreader with AlGaN/GaN HEMTs using a dry/wet combined etching process

AlN As Interlayer for Effective Thermal Dissipation from Gallium Nitride to CVD Diamond Using Nanocrystalline Diamond Seeding

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling.

Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

Near-junction microfluidic cooling for GaN HEMT with capped diamond heat spreader

A strategy for enhancing interfacial thermal transport in Ga 2 O 3 -diamond composite structure by introducing an AlN interlayer

Significantly Enhanced Interfacial Thermal Conductance across GaN/Diamond Interfaces Utilizing AlxGa1- xN as a Phonon Bridge

Significantly Enhanced Interfacial Thermal Conductance Across GaN/Diamond Interfaces Utilizing Alx Ga1-x N As a Phonon Bridge

Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure

Modulating microstructure and thermal properties of diamond/SiN x /GaN multilayer structure by diamond growth temperature

Polycrystalline Diamond Film Growth on Gallium Nitride with Low Boundary Thermal Resistance