Abstract:The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications, such as wireless communication and radar systems. However, the performance and reliability of GaN-based high-electron-mobility transistors (HEMTs) are limited by the high channel temperature induced by Joule heating in the device channel. Integration of GaN with high thermal conductivity substrates can improve the heat extraction from GaN-based HEMTs and lower the operating temperature of the device. However, heterogeneous integration of GaN with diamond substrates presents technical challenges to maximize the heat dissipation potential brought by the ultrahigh thermal conductivity of diamond substrates. In this work, two modified room-temperature surface-activated bonding (SAB) techniques are used to bond GaN and single-crystal diamond. Time-domain thermoreflectance (TDTR) is used to measure the thermal properties from room temperature to 480 K. A relatively large thermal boundary conductance (TBC) of the GaN/diamond interfaces with a ∼4 nm interlayer (∼90 MW/(m<sup>2</sup> K)) was observed and material characterization was performed to link the interfacial structure with the TBC. Device modeling shows that the measured TBC of the bonded GaN/diamond interfaces can enable high-power GaN devices by taking full advantage of the ultrahigh thermal conductivity of single-crystal diamond. For the modeled devices, the power density of GaN-on-diamond can reach values ∼2.5 times higher than that of GaN-on-SiC and ∼5.4 times higher than that of GaN-on-Si with a maximum device temperature of 250 °C. Our work sheds light on the potential for room-temperature heterogeneous integration of semiconductors with diamond for applications of electronics cooling, especially for GaN-on-diamond devices.

Understanding of multi-way heat extraction using peripheral diamond in AlGaN/GaN HEMT by electrothermal simulations

Impacts of diamond heat spreader on the thermo-mechanical characteristics of high-power AlGaN/GaN HEMTs

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

A Temperature Analysis of High-power AlGaN/GaN HEMTs

Simulations of Diamond Heat Spreader for the Thermal Management of Gan Hemt

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

FEM Thermal Analysis of High Power GaN-on-diamond HEMTs

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

Integration of polycrystalline diamond heat spreader with AlGaN/GaN HEMTs using a dry/wet combined etching process

Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Simulation Investigation of Effects of Substrate and Thermal Boundary Resistance on Performances of AlGaN/GaN HEMTs

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

Analytical Modelling of High Temperature Characteristics on the DC Responses for Schottky-gate AlGaN/GaN HEMT Devices

Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices

Near-junction microfluidic cooling for GaN HEMT with capped diamond heat spreader

Thermal Management of GaN HEMT Devices Using Subcooled Flow Boiling in an Embedded Manifold Microchannel Heat Sink

Accurate Estimation of Thermal Properties for AlGaN/GaN HEMTs on Diamond