Abstract:In this work, the device stability of p-GaN gate HEMTs under self-heating effect is comprehensively investigated by the ON-state drain current injection (DCI) technique. By delicately modulating the DCI condition, the devices exhibit different chip temperatures ranging from 40 °C to 150 °C, while the devices show quite distinguishing instability behaviors. Particularly, substantial threshold voltage shift and saturation drain current degradation is constantly observed in the device with severe self-heating effect after DCI stress. Significant ${V}_{\text{th}}$ shift of +0.83 V and saturation current reduction up to 18% are observed after the DCI stress, corresponding to a chip temperature of ~150 °C. After the device degradation, the device characteristics show a recoverable dynamic. By investigating the gate leakage current together with the electrothermal device TCAD simulation, ${V}_{\text{th}}$ instability induced by the self-heating is revealed to be the electron trapping in the p-GaN gate-stack, while the saturation drain current degradation originates from a composited action of thermally enhanced electron trapping/de-trapping in p-GaN gate-stack as well as the access region at the hot spot close to the source field plate. The results reported in this work suggest that self-heating is a critical issue that may cause unstable operation of p-GaN gate HEMTs. The revealed underlying mechanisms are beneficial for further improving device stability.

Operational Characteristics of Various AlGaN/GaN High Electron Mobility Transistor Structures Concerning Self-Heating Effect

Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

Comparison of recessed gate-head structures on normally-off AlGaN/GaN high-electron-mobility transistor performance

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Effect of Device Geometry on Static and Dynamic Performance of AlGaN/GaN-on-Si High Electron Mobility Transistor

Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Various Dielectric Passivation Structures for High-Power and High-Frequency Operations: A Simulation Study

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

Improvement of Breakdown Characteristic for a Novel GaN HEMT with Enhanced Resistance Single-Event Transient Effect

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique

The Effect Of The Gate-Drain Distance On High Frequency And Noise Performance For Algan/Gan Hemt

Optimization Conditions for High-Power AlGaN/InGaN/GaN/AlGaN High-Electron-Mobility Transistor Grown on SiC Substrate

Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs