Abstract:The leakage current suppression mechanism in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is investigated. It is known that leakage current can cause severe reliability problems for HEMT devices and conventional AlGaN/GaN HEMT devices suffer from detrimental off-state drain leakage current issues, especially under high off-state drain bias. Therefore, a leakage current suppression technique featuring hybrid-Schottky/ohmic-drain contact is discussed. Through the 2-zones leakage current suppression mechanism by the hybrid-Schottky/drain metal including the shielding effect of the rough ohmic-drain metal morphology and the drain side electric field modulation, AlGaN/GaN HEMT featuring this novel technique can significantly enhance the leakage current suppression capability and improve the breakdown voltage. An analytical method using loop-voltage-scanning is proposed to illustrate the optimization procedure of the hybrid-Schottky/ohmic drain metallization on leakage current suppression. Through the comparison of the loop leakage current hysteresis of conventional ohmic drain HEMT and hybrid-Schottky/ohmic drain, the leakage current suppression mechanism is verified through the leakage current considering surface acceptor-like trap charging/discharging model. Device featuring the hybrid-Schottky/ohmic drain technique shows an improvement in breakdown voltage from 450 V (with no Schottky drain metal) to 855 V with a total drift region length of 9 mu m, indicating enhanced off-state reliability characteristics for the AlGaN/GaN HEMT devices. (C) 2014 Elsevier Ltd. All rights reserved.

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Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

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Study of the Breakdown Failure Mechanisms for Power AlGaN/GaN HEMTs Implemented Using a RF Compatible Process

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

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Operational Characteristics of Various AlGaN/GaN High Electron Mobility Transistor Structures Concerning Self-Heating Effect

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

Theoretical Analysis of Buffer Trapping Effects on Off-State Breakdown Between Gate and Drain in AlGaN/GaN HEMTs

Hot Electron Assisted Vertical Leakage/breakdown in AlGaN/GaN Heterostructures on Si Substrates

Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage

Comparative Study Between Partially and Fully Recessed‐Gate Enhancement‐Mode AlGaN/GaN MIS HEMT on the Breakdown Mechanism

Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

Effect of Hole-Injection on Leakage Degradation in a &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$p$ &Lt;/tex-Math> &Lt;/inline-Formula>-gan Gate AlGaN/GaN Power Transistor

Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile