Abstract:A reduced surface electric field in an AlGaN/GaN high electron mobility transistor (HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional source-connected field plates and double field plates, the HEMT with a Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, L-m, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with V-GS = 5 V, L-m = 1.5 mu m, a peak Mg doping concentration of 8x10(17) cm(-3) and a drift region length of 10 mu m, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.

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Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

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Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

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Breakdown Voltage Enhancement for Power AlGaN/GaN HEMTs with Air-bridge Field Plate

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors.

Breakdown Voltage Enhancement For Gan High Electron Mobility Transistors

High Breakdown Voltage AlGaN/GaN HEMT with Graded Fluorine Ion Implantation Terminal in Thick Passivation Layer

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An Algan/Gan Hemt with Enhanced Breakdown and A Near-Zero Breakdown Voltage Temperature Coefficient

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An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

Algan/Gan Metal-Insulator-Semiconductor High Electron Mobility Transistors with Reduced Leakage Current and Enhanced Breakdown Voltage Using Aluminum Ion Implantation