Abstract:This study presents an investigation of high-voltage enhancement-mode p-GaN gate HEMTs on a sapphire substrate. The breakdown voltage of the devices shows a linear relationship with the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$L_{\text{GD}}$</tex> . For <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$L_{\text{GD}}=27 \mu\mathrm{m}$</tex> , the device exhibits a high breakdown voltage of 1412 V. The threshold voltage is 0.9 V. The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{on}}$</tex> is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$17.7\ \ \Omega\cdot \text{mm}$</tex> , and the specific on-resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{sp}}$</tex> is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$6.73\ \mathrm{m}\Omega\cdot \text{cm}^{2}$</tex> . To measure the depletion region directly for high-voltage devices, depletion-testing structures were fabricated alongside the HEMTs. The depletion lengths were determined based on the I- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V$</tex> characteristics of the structures, with the pinch-off voltage of the I- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V$</tex> characteristics correlated to the depletion length. Additionally, using pulse waveforms as the gate control signals, the formation of the depletion region under dynamic conditions was revealed.

Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors.

Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si

Theoretical Analysis of Buffer Trapping Effects on Off-State Breakdown Between Gate and Drain in AlGaN/GaN HEMTs

Source Injection Induced Off-State Breakdown And Its Improvement By Enhanced Back Barrier With Fluorine Ion Implantation In Algan/Gan Hemts

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

Study of the Breakdown Failure Mechanisms for Power AlGaN/GaN HEMTs Implemented Using a RF Compatible Process

Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage

ON-state breakdown mechanism of GaN power HEMTs

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

Failure Behavior and Mechanism of P-Gan Gate AlGaN/GaN HEMTs in the Third Quadrant under Repetitive Surge Current Stress

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

Method to Study Dynamic Depletion Behaviors in High-Voltage (<tex>$BV=1.4\ \text{kV}$</tex>) p-GaN Gate HEMT on Sapphire Substrate

Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Failure Analysis of 200V P-Gan HEMT under Unclamped Inductive Switching Conditions