Abstract:In this article, the single event burnout (SEB) performances for 2DEG Alx $\text{Ga}_{{1}-{x}}\text{N}$ channel p-GaN gate high electron mobility transistors (HEMTs) have been investigated comprehensively to reveal the failure mechanisms and broaden applications in harsh environments. As Al composition ${x}$ increases from 0.0 to 0.4, ${V}_{\text {BR}}$ increases from 500 to 730 V, and the corresponding SEB voltage ${V}_{\text {SEB}}$ at linear energy transfer (LET) = 10 pC/$\mu \text{m}$ increases from 300 to 450 V. Possible mechanisms of Alx$\text{Ga}_{{1}-{x}}\text{N}$ channel HEMTs from the perspective of electric field (${E}$ -field) are proposed. ${E}$ -field near source and drain side after radiation would have a high peak ${E}$ -field and that of p-GaN layer exceeds 3.3 MV/cm of critical ${E}$ -field for GaN material, causing SEB to occur (LET = 10 pC/$\mu \text{m}$ ). When SEB occurs in HEMTs, ${E}$ -field would increase rapidly and cannot be recovered. A new phenomenon has been first discovered when SEB occurs in Alx$\text{Ga}_{{1}-{x}}\text{N}$ channel HEMTs with p-GaN gate (${x} = {0.0}$ –0.4, step = 0.1). In addition to the back-channel effect, an excess of holes would be left in the buffer layer after electrons flow toward the drain. It allows the injection of an excess of holes in the buffer layer into the gate with low potential, resulting in a sharp increase in ${I}_{\text {G}}$ . Simulation results indicate that AlGaN channel HEMTs have great advantages in SEB performances compared with the traditional GaN channel HEMTs.

Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

Main Mechanism Responsible for pGaN Gate Breakdown and Lifetime Projection in GaN HEMTs

Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

Demonstration and Thermal Reliability of an E-Mode P-Type Hexagonal Boron Nitride Gate AlGaN/GaN HEMT

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

Effects of Gate Work Function on E-mode AlGaN/GaN HEMTs with Stack Gate Β-Ga2o3/p-gan Structure

Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage

Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors

Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga<sub>2</sub>O<sub>3</sub>/p-GaN structure

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Study on a p-GaN HEMT with composite passivation and composite barrier layers

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Gate and barrier layer design of E-mode GaN HEMT with p-GaN gate structure

Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs

Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG Al x Ga 1- x N Channel