Abstract:This paper proposes a novel normally-off p-GaN gate InAlN/GaN HEMT to replace p-GaN gate AlGaN/GaN HEMT for improving the device stability, enhancing saturation current, reducing the on-state resistance, improving the cut off frequency and decreasing the subthreshold swing. Due to the higher two-dimensional electron gas induced by the polarization, the on-state resistance for p-GaN gate InAlN HEMT can be lowered by 23% while the on-state current can be enhanced by 161% comparing with the common p-GaN gate AlGaN HEMT at Vgs = 5 V. The cut off frequency of InAlN HEMT is 11.5 GHz, which is 39% higher than that of AlGaN HEMT. While the low breakdown voltage (BV) of InAlN HEMT restricts the device performance and power application. The thickness and permittivity of the passivation layer are found to influence the BV of the device significantly, due to the alleviation of peak electric field at the drain-side gate edge, leading to a much smoother distribution of electric field in the channel. A proposed structure with TiO2 passivation layer exhibits a breakdown of 1028 V, showing 25% increase in breakdown voltage compared to the TiO2 passivation layer AlGaN HEMT. These simulation results revealed that the p-GaN gate InAlN/GaN HEMT is a reliable candidate in power application.

Demonstration and Thermal Reliability of an E-Mode P-Type Hexagonal Boron Nitride Gate AlGaN/GaN HEMT

High-performance Normally off AlGaN/GaN High Electron Mobility Transistor with P-Type H-Bn Cap Layer

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

Boosted High-Temperature Electrical Characteristics of AlGaN/GaN HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barriers

An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

An Improved Design for E-Mode AlGaN/GaN HEMT with Gate Stack -Ga2o3/p-gan Structure

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

Effects of Gate Work Function on E-mode AlGaN/GaN HEMTs with Stack Gate Β-Ga2o3/p-gan Structure

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f max ·V BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Over 1200 V Normally-OFF P-Nio Gated AlGaN/GaN HEMTs on Si with a Small Threshold Voltage Shift

Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga<sub>2</sub>O<sub>3</sub>/p-GaN structure

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

High Voltage Normally-Off p-GaN Gate HEMT with the Compatible High Threshold and Drain Current

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications