Abstract:This study presents the approaches to simultaneously realize various MEMS devices respectively encapsulated inside sealed and unsealed chambers by using the existing microfabrication and wafer level capping processes. In general, the wafer level capping process could encapsulate MEMS devices inside sealed chambers. In this study, the air leakage paths from the encapsulated chamber to the ambient have been selectively patterned and fabricated using the existing processes, so that the unsealed chambers are also achieved. The unsealed chamber is connected to the ambient and can be employed to encapsulate environmental monitoring devices such as humidity or pressure sensors. However, the sealed chamber is isolated with the ambient. The pressure in the sealed chamber is determined by the vacuum condition during the wafer level capping process. The sealed chamber could encapsulate devices such as motion sensors and resonators in the required vacuum condition. Thus, the presented approaches could enable existing process platforms to monolithically fabricate and encapsulate more devices for various applications. Devices such as micromachined Pirani gauge, resonator, and pressure sensor are fabricated and characterized to verify the present approaches. Measurement results indicate that sensors in different pressure conditions are respectively achieved by unsealed chambers and sealed chambers.

12 inch MEMS process for sensors implementation and integration

Process Development of A New Tgv Interposer for Wafer Level Package of Inertial Mems Device

Implementation of Various Vacuum Conditions in Sealed Chambers for Wafer-Level Bonding by Using Embedded Cavity

A CMOS Compatible Process for Monolithic Integration of High-Aspect-ratio Bulk Silicon Microstructures

Study on Compatible CMOS-MEMS Process with Surface Micromachining for the Application of Monolithic Integration

Design and fabrication of MEMS devices using the integration of MUMPs, trench-refilled molding, DRIE and bulk silicon etching processes

Design and Implementation of Monolithically Integrated Sealed and Unsealed Chambers by Using the Wafer Level Packaging

Realize Multiple Hermetic Chamber Pressures for System-on-chip Process by Using the Capping Wafer with Diverse Cavity Depths

Fabrication and wafer-level vacuum packaging of MEMS resonant pressure sensor

A Wafer Level Vacuum Encapsulated Capacitive Accelerometer Fabricated in an Unmodified Commercial MEMS Process

A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices

Fabrication of SOI MEMS Inertial Sensors with Dry Releasing Process

Integration of PDMS-infiltrated CNTs and Si bulk-micromachining for monolithic physical sensors application

Fabrication of Monolithic Integrated MEMS Resonator with Wet-Release-monitoring Array

Inter-CMOS process for monolithic integrated MEMS resonator

Wafer-Level Self-Packaging Design and Fabrication of MEMS Capacitive Pressure Sensors

Bulk-Si with Poly Bump Process Scheme for MEMS Sensors

Monolithic Integration of Capacitive Sensors Using A Double-Side Cmos Mems Post Process

Process-Induced Stress and Hydrogen Effects on Monolithic Integrated CMOS-MEMS Micro-Bimaterial Cantilever Sensor Array

Design and Application of a Metal Wet-Etching Post-Process for the Improvement of CMOS-MEMS Capacitive Sensors