Abstract:Ultra-sensitive and selective moisture sensors are needed in various industries for processing control or environmental monitoring. As an outstanding sensor platform, surface-stress sensing microcantilevers have potential application in moisture detection. To enlarge the deflection of the microcantilever under surface stress induced by specific reactions, a new SiO 2 microcantilever is developed which features a much lower Young’s modulus than conventional Si or SiN x microcantilevers. For comparing SiO 2 cantilever with Si cantilevers, a model of the cantilever sensor is given by using both analysis and simulation, resulting in good agreement with the experimental data. The results demonstrate the SiO 2 cantilever can achieve a much higher sensitivity than the Si cantilever. In order to fabricate this device, a new fabrication process using isotropic combined with anisotropic dry etching to release the SiO 2 microcantilever beam by ICP (Inductively Coupled Plasma) was developed and investigated. This new process not only obtains a high etch rate at 9.1 μm/min, but also provides good profile controllability, and a flexibility of device design. Attributed to the high sensitivity, a significant deflection amplitude of the surface modified SiO 2 microcantilever was observed upon exposure to 1% relative humidity. The SiO 2 cantilevers are promising for inexpensive and highly sensitive moisture detection.

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