Fabrication and wafer-level vacuum packaging of MEMS resonant pressure sensor

王军波 Wang Jun-bo,曹明威 Cao Ming-wei,张. Z. Jian,焦海龙 Jiao Hai-long,陈德勇 Chen De-yong
DOI: https://doi.org/10.3788/OPE.20142205.1235
Abstract:To improve the quality factor of sensors and to protect resonators,the fabrication and waferlevel vacuum packaging methods for a Micro-electro-mechanic System(MEMS)resonant pressure sensor was proposed based on Silicon On Insulator(SOI)-glass anodic bonding technology.Through Deep Reactive Ion Etching(DRIE)process and buffered oxide etched releasing process,H-type resonant beams and pressure diaphragm of the sensor were fabricated on the low resistivity device layer and the substrate layer of SOI wafer,respectively,and a moveable mechanism was release by a SiO2 layer of the SOI wafer corroded by hydrofluoric acid flow.Finally,electrical connection and a cavity for the vibration of beams was implemented on the Pyrex glass piece by fine mechanical machining and the wafer-level vacuum packaging and electric connection of the resonators were achieved with SOIglass anodic bonding.Experimental results demonstrate that the packaging scheme is effective andeasy to achieve with an excellent hermetic sealing,and the sensor has a differential sensitivity of 10.66 Hz/hPa and linear correlation coefficient of 0.999 995in the range of 10kPa to 110kPa.
Engineering,Materials Science,Physics
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