Balance equation approach to hot electron transport in many-valley semiconductors: Comparing with the Monte Carlo results for n-type Si

C.S. Ting,M. Liu,D.Y. Xing
DOI: https://doi.org/10.1016/0038-1101(88)90339-5
IF: 1.916
1988-01-01
Solid-State Electronics
Abstract:Most of the theoretical approachs to high field electron transport in many-valley semiconductors have been based either on Monte Carlo simulation or on solving the phenomenological Boltzmann equation in relaxation time approximation. Although the analytic balance equation method has been applied to various kind of problems in high field transport, its validity in comparing with other methods has not been established. In this paper, taking the same set of parameters as those in the Monte Carlo simulation for n-type Si, we calculate the drift velocity as a function of the electric field for the <111>, <100> and <110> directions in the temperature range (T=8°K to 300°K) from the balance equations obtained by the method of the nonequilibrium statistical operator. We show that our results are in excellent agreement with those of the Monte Carlo method in the wide range of temperature and field. We also point out that the so called quantum correction of the hot electron transport is not important for the present problem.
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