Thermoelectric-Power of Hot Carriers in the Nonequilibrium-Statistical-Operator Approach

DY XING,M LIU,JM DONG,ZD WANG
DOI: https://doi.org/10.1103/physrevb.51.2193
1995-01-01
Abstract:The thermoelectric power of charge carriers heated under a strong applied electric field in semiconductors is obtained by use of the nonequilibrium-statistical-operator (NSO) method. The balance equations are derived in terms of the NSO density matrix and the force-force correlation functions which can easily be calculated for a system with electron-impurity and electron-phonon interactions. A numerical study has been performed for hole-doped Ge. It is shown that the hot-electron thermoelectric power is sensitively affected by the applied electric field and that its sign is reversed at higher electric fields.
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