Abstract:The balance-equation approach to nonlinear hot-carrier transport theory, formulated by Lei and Ting (1984), is addressed in this comprehensive review. A central feature is the role of strong electron-electron interactions in promoting rapid thermalization about the drifted transport state and the concomitant substantial simplification of the transport theory. This physical feature is embodied in the initial density matrix chosen to represent the unperturbed carrier system. Force and energy balance equations are formulated for the dc steady state, ac dynamic and transient cases of charge conduction, including memory effects. The scattering mechanisms include impurity and phonon interactions along with dynamic nonlocal screening effects due to carrier-carrier interactions. Both linear and nonlinear resistivities are discussed in the degenerate and nondegenerate statistical regimes. Interesting phenomena such as electron cooling and thermal noise and diffusion are discussed as well. Semiconductor microstructure transport is described for both linear and nonlinear hot carrier conduction. In this connection, quasi-2D-systems, heterojunctions, and quantum well superlattices are treated with attention to steady state, transient and high frequency transport, including, for example, superlattice plasmon resonance structure. Type-II superlattice transport is reviewed as well as type-I, and electron-hole drag is treated in conjunction with negative minority electron mobility in a quantum well. Multivalley semiconductors are discussed in some detail. Furthermore, attention is also focused on the center-of-mass velocity fluctuation, Langevin-type equation and thermal noise and diffusion for microstructures and multivalley systems. A number of particularly important phenomena are examined from the balance-equation point of view, such as nonequilibrium phonons, higher order scattering effects and weak localization, hydrodynamic equations for weakly nonuniform systems, and the intracollisional field effect. Alternative formulations and interpretations of the balance-equation approach are reviewed. The distinction between this many-particle, isothermal, balance-equation theory and the noninteracting (single-particle) adiabatic transport theory is discussed to clarify issues subject to controversy in the literature. Finally, we give a brief review of recent developments in the balance-equation approach: investigation of the distribution function in balance-equation theory, improved calculations for GaAs/AlGaAs heterojunctions, extension of the balance equations to an abitrary energy band and recent work on superlattice miniband transport.

Monte Carlo Simulation of Charge Carriers Diffusion in a Nonhomogeneous Medium with a Nonuniform Temperature

Carrier Transport Simulation Methods for Electronic Devices with Coexistence of Quantum Transport and Diffusive Transport

Monte Carlo Simulation of Electron Transport in Degenerate Semiconductors

A Current Transport Model Which Includes Effects of Lattice Heating

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Monte Carlo Simulation of Electron Transport in Silicon Carbide

Monte Carle Simulation of Quantum Transport Through Nanostructures

Computation of the Spatial Distribution of Charge-Carrier Density in Disordered Media

Kinetic Monte Carlo Simulation of Single-Electron Multiple-Trapping Transport in Disordered Media

Charge transport systems with Fermi-Dirac statistics for memristors

Balance-Equation Approach to Hot-Carrier Transport in Semiconductors

Practical Computation of the Charge Mobility in Molecular Semiconductors Using Transient Localization Theory

Computationally efficient Monte Carlo electron transport algorithm for nanostructured thermoelectric material configurations

Monte Carlo simulation of charge transport in electrically doped organic solids

Diffusion of Hot Carriers in Two-Valley Semiconductors

Balance equation approach to hot electron transport in many-valley semiconductors: Comparing with the Monte Carlo results for n-type Si

Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk Mosfets in the Presence of Random Discrete Dopants

The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials

Nonlinear charge transport in highly polar semiconductors: GaN, AlN, InN and GaAs

Non-isothermal Scharfetter-Gummel scheme for electro-thermal transport simulation in degenerate semiconductors