Abstract:Finite-temperature calculations are relevant for rationalizing material properties yet they are computationally expensive because large system sizes or long simulation times are typically required. Circumventing the need for performing many explicit first-principles calculations, tight-binding and machine-learning models for the electronic structure emerged as promising alternatives, but transferability of such methods to elevated temperatures in a data-efficient way remains a great challenge. In this work, we suggest a tight-binding model for efficient and accurate calculations of temperature-dependent properties of semiconductors. Our approach utilizes physics-informed modeling of the electronic structure in form of hybrid-orbital basis functions and numerically integrating atomic orbitals for the distance dependence of matrix elements. We show that these design choices lead to a tight-binding model with a minimal amount of parameters which are straightforwardly optimized using density functional theory or alternative electronic-structure methods. Temperature-transferability of our model is tested by applying it to existing molecular-dynamics trajectories without explicitly fitting temperature-dependent data and comparison to density functional theory. We utilize it together with machine-learning molecular dynamics and hybrid density functional theory for the prototypical semiconductor gallium arsenide. We find that including the effects of thermal expansion on the onsite terms of the tight-binding model is important in order to accurately describe electronic properties at elevated temperatures in comparison to experiment.

Non-isothermal Scharfetter-Gummel scheme for electro-thermal transport simulation in degenerate semiconductors

Coupled electron--heat transport in nonuniform thin film semiconductor structures

Unified Semiclassical Approach to Electronic Transport from Diffusive to Ballistic Regimes

Temperature-transferable tight-binding model using a hybrid-orbital basis

Electro-Thermo-Chemical Computational Models for 3D Heterogeneous Semiconductor Device Simulation

Deviational Monte Carlo Scheme for Thermal and Electrical Transport in Metal Nanostructures

A Relaxation Scheme for the Hydrodynamic Equations for Semiconductors

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Fast Simulation of Nonuniform Substrate Temperature Effects on Global GSI Interconnects

Hybrid Monte Carlo-Diffusion Studies of Modeling Self-Heating in Ballistic-Diffusive Regime for Gallium Nitride HEMTs

Monte Carlo Simulation of Charge Carriers Diffusion in a Nonhomogeneous Medium with a Nonuniform Temperature

Simulating Semiconductor Charge Transport

First-Principles Molecular Dynamics Investigation of the Atomic-Scale Energy Transport: From Heat Conduction to Thermal Radiation

Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle

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Analysis of a Finite Element Method for the Drift-Diffusion Semiconductor Device Equations: the Multidimensional Case

Inelastic transport theory from first-principles: methodology and applications for nanoscale devices