Abstract:Charge carrier mobility is at the core of semiconductor materials and devices optimization, and Hall measurement is one of the most important techniques for its characterization. The Hall factor, defined as the ratio between Hall and drift mobilities, is of particular importance. Here we study the effect of anisotropy by computing the drift and Hall mobility tensors of a technologically important wide-band-gap semiconductor, $4H$-silicon carbide ($4H$-SiC), from first principles. With $GW$ electronic structure and ab initio electron-phonon interactions, we solve the Boltzmann transport equation without fitting parameters. The calculated electron and hole mobilities agree with experimental data. The electron Hall factor strongly depends on the direction of external magnetic field $\mathbf{B}$, and the hole Hall factor exhibits different temperature dependency for $\mathbf{B}\ensuremath{\parallel}c$ and $\mathbf{B}\ensuremath{\perp}c$. We explain this by the different equienergy surface shape arising from the anisotropic and nonparabolic band structure, together with the energy-dependent electron-phonon scattering.

Band structure anisotropy effects on the ultrafast electron transport in 4H-SiC

An Ensemble Monte Carlo Study of Electron Transport in Nitrogen-Doped 4H-SiC

Anisotropic Hole Drift Velocity in 4H-SiC

Experimental and theoretical study on anisotropic electron mobility in 4H‐SiC

Monte Carlo study of electron transport in SiC

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Monte Carlo Simulation of Electron Transport in Silicon Carbide

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Study of High-Field Electron Transport in Semiconductors Using Balance Equations for Nonparabolic Multivalley Systems

Theory of the anisotropy of the electron Hall mobility in n-type 4H– and 6H–SiC

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H–SiC

High field transport in strained Si/GeSi double heterostructure: a Fokker-Planck approach

Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature

Time dependence of current-voltage measurements of c-axis quasiparticle conductivity in 2212-BSCCO mesa structures

High-field transport properties of bulk Si: A test for the Fokker-Planck approach

Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity.

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

Hot-electron Transient Transport in a Superlattice Miniband

Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure

Nonparabolic Multivalley Balance-Equation Approach to High-Field Electron Transport in GaAs

The Effect of Electron Confinement on the Transient Velocity Response in A Superlattice Miniband