Abstract:The channel conduction in 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance in these transistors. In this work, the dominant scattering mechanisms are distinguished for inversion layer electrons and holes using temperature and body-bias-dependent Hall measurements on nitrided lateral 4H-SiC MOSFETs. The effect of the transverse electric field (Eeff) on carrier mobility is analyzed under strong inversion condition where surface roughness scattering becomes prevalent. Power law dependencies of the electron and hole Hall mobility for surface roughness scattering are determined to be Eeff-1.8 and Eeff-2.4, respectively, analogous to those of silicon MOSFETs. Moreover, for n-channel MOSFETs, the effect of phonon scattering is observed at zero body bias, whereas in p-channel MOSFETs, it is observed only under negative body biases. Along with the identification of regimes governed by different scattering mechanisms, these results highlight the importance of the selection of substrate doping and of Eeff in controlling the value of channel mobility in 4H-SiC MOSFETs.

Theory of the anisotropy of the electron Hall mobility in n-type 4H– and 6H–SiC

Experimental and theoretical study on anisotropic electron mobility in 4H‐SiC

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H–SiC

Origin of hole mobility anisotropy in 4H-SiC

Conductivity Anisotropy in Epitaxial 6H and 4H Sic

Hall Mobility in N-Type 4H-Sic: Calculation Using Hydrodynamic Balance Equations

An Ensemble Monte Carlo Study of Electron Transport in Nitrogen-Doped 4H-SiC

Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature

Monte Carlo study of electron transport in SiC

Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

Anisotropic drift diffusion model for 4H-, 6H-SiC devices simulation

Band structure anisotropy effects on the ultrafast electron transport in 4H-SiC

Anisotropic Hole Drift Velocity in 4H-SiC

Influence of the Fermi surface shape on magnetotransport: the MnAs case

Two-band model for anisotropic Hall effect in high-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>T</mml:mi></mml:mrow><mml:mrow><mml:mi>c</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Y-Ba-Cu-O

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices