Abstract:The minimization of electronics makes heat dissipation of related devices an increasing challenge. When the size of materials is smaller than the phonon mean free paths, phonons transport without internal scatterings and laws of diffusive thermal conduction fail, resulting in significant reduction in the effective thermal conductivity. This work reports, for the first time, the temperature dependent thermal conductivity of doped epitaxial 6H-SiC and monocrystalline porous 6H-SiC below room temperature probed by time-domain thermoreflectance. Strong quasi-ballistic thermal transport was observed in these samples, especially at low temperatures. Doping and structural boundaries were applied to tune the quasi-ballistic thermal transport since dopants selectively scatter high-frequency phonons while boundaries scatter phonons with long mean free paths. Exceptionally strong phonon scattering by boron dopants are observed, compared to nitrogen dopants. Furthermore, orders of magnitude reduction in the measured thermal conductivity was observed at low temperatures for the porous 6H-SiC compared to the epitaxial 6H-SiC. Finally, first principles calculations and a simple Callaway model are built to understand the measured thermal conductivities. Our work sheds light on the fundamental understanding of thermal conduction in technologically-important wide bandgap semiconductors such as 6H-SiC and will impact applications such as thermal management of 6H-SiC-related electronics and devices.

Conductivity Anisotropy in Epitaxial 6H and 4H Sic

Conductivity Anisotropy in Epitaxial 6H and 4H Sic

Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature

Theory of the anisotropy of the electron Hall mobility in n-type 4H– and 6H–SiC

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Experimental and theoretical study on anisotropic electron mobility in 4H‐SiC

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H–SiC

Origin of hole mobility anisotropy in 4H-SiC

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Hall Mobility in N-Type 4H-Sic: Calculation Using Hydrodynamic Balance Equations

Monte Carlo study of electron transport in SiC

Anisotropic Thermal Conductivity of 4H and 6H Silicon Carbide Measured Using Time-Domain Thermoreflectance

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Free electron density and mobility in high-quality 4H–SiC

Quasi-Ballistic Thermal Conduction in 6H-SiC

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

An Ensemble Monte Carlo Study of Electron Transport in Nitrogen-Doped 4H-SiC

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Anisotropic drift diffusion model for 4H-, 6H-SiC devices simulation

Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

Study of Interface State Density and Effective Oxide Charge in Post-Metallization Annealed SiO/sub 2/-Sic Structures