Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Hall Mobility in N-Type 4H-Sic: Calculation Using Hydrodynamic Balance Equations

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Theory of the anisotropy of the electron Hall mobility in n-type 4H– and 6H–SiC

Experimental and theoretical study on anisotropic electron mobility in 4H‐SiC

Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature

Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

Origin of hole mobility anisotropy in 4H-SiC

An Ensemble Monte Carlo Study of Electron Transport in Nitrogen-Doped 4H-SiC

Free electron density and mobility in high-quality 4H–SiC

Conductivity Anisotropy in Epitaxial 6H and 4H Sic

Monte Carlo study of electron transport in SiC

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

A Unified Mobility Model for Cryogenic Bulk Silicon Simulations in Wide Doping Range

High Hole Mobility Si/Si1-Xgex/Si Heterostructure

Mobility Anisotropy of Two-Dimensional Semiconductors