Abstract:Wide-bandgap (WBG) semiconductors have promising applications in power electronics due to their high voltages, radio frequencies, and tolerant temperatures. Among all the WBG semiconductors, SiC has attracted attention because of its high mobility, high thermal stability, and high thermal conductivity. However, the interfaces between SiC and the corresponding substrate largely affect the performance of SiC-based electronics. It is therefore necessary to understand and design the interfacial thermal transport across the SiC/substrate interfaces, which is critical for the thermal management design of these SiC-based power electronics. This work systematically investigates heat transfer across the 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces using non-equilibrium molecular dynamics simulations and diffuse mismatch model. We find that the room temperature ITC for 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces is 932 MW/m2K, 759 MW/m2K, and 697 MW/m2K, respectively. We also show the contribution of the ITC resulting from elastic scatterings at room temperature is 80% for 3C-SiC/Si interfaces, 85% for 4H-SiC/Si interfaces, and 82% for 6H-SiC/Si interfaces, respectively. We further find the ITC contributed by the elastic scattering decreases with the temperature but remains at a high ratio of 67%~78% even at an ultrahigh temperature of 1000 K. The reason for such a high elastic ITC is the large overlap between the vibrational density of states of Si and SiC at low frequencies (< ~ 18 THz), which is also demonstrated by the diffuse mismatch mode. It is interesting to find that the inelastic ITC resulting from the phonons with frequencies higher than the cutoff frequency of Si (i.e., ~18 THz) can be negligible. That may be because of the wide frequency gap between Si and SiC, which makes the inelastic scattering among these phonons challenging to meet the energy and momentum conservation rules.

Anisotropic Thermal Conductivity of 4H and 6H Silicon Carbide Measured Using Time-Domain Thermoreflectance

The Intrinsic Thermoreflectance Property of 4H-SiC

Quasi-Ballistic Thermal Conduction in 6H-SiC

Phonon thermal transport in 2H, 4H and 6H silicon carbide from first principles

Quasi-ballistic thermal transport in silicon carbide nanowires

High thermal conductivity in wafer-scale cubic silicon carbide crystals

Role of Elastic Phonon Couplings in Dictating the Thermal Transport across Atomically Sharp SiC/Si Interfaces

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

C244 Thermal Conductivity of Individual SiC Nanowires

Thermal Conductivity of SiC Microwires: Effect of Temperature and Structural Domain Size Uncovered by 0 K Limit Phonon Scattering

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H–SiC

Thermal Conductivity Study of 2D Si4C8 material by Anharmonic Phonon Renormalization

Nanoscale limit of the thermal conductivity in crystalline silicon carbide membranes, nanowires, and phononic crystals

Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Films Using Improved Structure

Tunable Thermal Conductivity of Two-Dimensional SiC Nanosheets by Grain Boundaries: Implications for the Thermo-Mechanical Sensor

Nonlinear optical properties of 6H-SiC and 4H-SiC in an extensive spectral range

Unraveling High Thermal Conductivity with In-Plane Anisotropy Observed in Suspended SiP2

Thermal Radiation Character-Istics of Plane-Parallel SiC Wafer

Accurate and wide-range measurement of thermal conductivity of semiconductor materials by laser-excited Raman spectroscopy

Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation

Conductivity Anisotropy in Epitaxial 6H and 4H Sic