Abstract:Wide-bandgap (WBG) semiconductors have promising applications in power electronics due to their high voltages, radio frequencies, and tolerant temperatures. Among all the WBG semiconductors, SiC has attracted attention because of its high mobility, high thermal stability, and high thermal conductivity. However, the interfaces between SiC and the corresponding substrate largely affect the performance of SiC-based electronics. It is therefore necessary to understand and design the interfacial thermal transport across the SiC/substrate interfaces, which is critical for the thermal management design of these SiC-based power electronics. This work systematically investigates heat transfer across the 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces using non-equilibrium molecular dynamics simulations and diffuse mismatch model. We find that the room temperature ITC for 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces is 932 MW/m2K, 759 MW/m2K, and 697 MW/m2K, respectively. We also show the contribution of the ITC resulting from elastic scatterings at room temperature is 80% for 3C-SiC/Si interfaces, 85% for 4H-SiC/Si interfaces, and 82% for 6H-SiC/Si interfaces, respectively. We further find the ITC contributed by the elastic scattering decreases with the temperature but remains at a high ratio of 67%~78% even at an ultrahigh temperature of 1000 K. The reason for such a high elastic ITC is the large overlap between the vibrational density of states of Si and SiC at low frequencies (< ~ 18 THz), which is also demonstrated by the diffuse mismatch mode. It is interesting to find that the inelastic ITC resulting from the phonons with frequencies higher than the cutoff frequency of Si (i.e., ~18 THz) can be negligible. That may be because of the wide frequency gap between Si and SiC, which makes the inelastic scattering among these phonons challenging to meet the energy and momentum conservation rules.

Thermal Radiation Character-Istics of Plane-Parallel SiC Wafer

Anisotropic Thermal Conductivity of 4H and 6H Silicon Carbide Measured Using Time-Domain Thermoreflectance

Thermal radiative properties of a SiC grating on a photonic crystal

Narrowband Diffuse Thermal Emitter Based on Surface Phonon Polaritons

The Intrinsic Thermoreflectance Property of 4H-SiC

Dual-Band Quasi-Coherent Radiative Thermal Source

Coherent Thermal Radiation in Thin Films and Its Application in the Emissivity Design of Multilayer Films

Thermal Radiative Properties of a SiC/Photonic Crystal Structure Mediated With Micro-Grating

Microwave Absorbability of Unidirectional SiC Fiber Composites As a Function of the Constituents’ Properties

Thermal Radiative Properties of A 2-D Silicon Carbide Grating Mediated with A Photonic Crystal

Thermal Radiative Properties of A Photonic Crystal Structure Sandwiched by Sic Gratings

Nonvolatile Tunable Silicon-Carbide-based Midinfrared Thermal Emitter Enabled by Phase-Changing Materials.

Design and Optimization of a SiC Thermal Emitter/absorber Composed of Periodic Microstructures Based on a Non-Linear Method

Infrared Absorbance of SiN_x and SiC

Temperature-dependent Infrared Optical Properties of 3C-, 4H- and 6H-Sic

Non-uniform and Volumetric Effect on the Hydrodynamic and Thermal Characteristic in a Unit Solar Absorber

Efficient Thermal Dissipation in Wafer-Scale Heterogeneous Integration of Single-Crystalline Β-Ga2o3 Thin Film on SiC

Infrared Absorbance of SiNx and SiC

Analysis of Infrared Radiation Properties of SiC Particles with Different Microstructures

High thermal conductivity in wafer-scale cubic silicon carbide crystals

Role of Elastic Phonon Couplings in Dictating the Thermal Transport across Atomically Sharp SiC/Si Interfaces