Infrared Absorbance of SiNx and SiC

WANG Xin,YU Xiao-mei,TIAN Da-yu
DOI: https://doi.org/10.3969/j.issn.1004-1699.2006.05.124
2006-01-01
Abstract:LPCVD and PECVD techniques were used to deposit SiN_x and SiC thin films. The IR absorbance spectra of the films were acquired by using a Nicolet Magna 750 FTIR. The experiment results show that the LPCVD SiN_x had an absorbance peak in the range of 8~14 μm, and PECVD SiN_x and SiC had two absorbance peaks, which is in the range of 3~5 μm and 8~14 μm respectively. The IR absorbance of the films increased as the films thickness increase. The peak absorbance of SiN_x film of 1 μm thick can reach 0.92. Ion implantation technology was also utilized to change the IR absorbance of the materials.
What problem does this paper attempt to address?