Abstract:Basal plane dislocations (BPDs) in 4H-SiC are the main reason for the degradation of bipolar devices. In the experiment, the distribution of 4-fold symmetry BPDs is observed in the etch pit density of the 4H-SiC wafer, which is inconsistent with the phenomenon of the distribution of 6-fold symmetry BPDs because of the hexagonal structure of 4H-SiC. To explain the distribution of 4-fold symmetry BPDs in the grown crystal, 3D modeling of BPDs in 4H-SiC crystals grown by the PVT method has been performed. The results show that the adoption of 4-degree off-axis seed crystals that are widely used in the industry caused the distribution of 4-fold symmetry BPDs. Moreover, the distribution of BPDs is 6-fold symmetry in on-axis grown 4H-SiC single crystals; with the increase of the off-angle, the distribution of BPDs gradually changes from 6-fold to 4-fold symmetry, and the maximum value of the BPD density is at the periphery. In the end, the strategy of growing 4H-SiC crystals with large-size seed crystals has been proposed to reduce the BPD density in the wafer and improve the quality of the substrate. The calculation results shows that the use of 220 mm seed crystals can reduce the BPD density by 15% compared with 200 mm seed crystals. The basal plane slip model in 4H-SiC was developed to investigate the effects of off-axis angles on total resolved shear stress. The results showed that the TRSS changed from 6-fold to 4-fold symmetry with the increasing off-axis angles.

Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices

Pseudo-Hall Effect in Single Crystal N-Type 3C-Sic(100) Thin Film

Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress

in p-type 3 C – SiC four-terminal devices under mechanical stress †

Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

Strain effect in highly-doped n-type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Piezojunction effect in heterojunctions under external bias for ultrasensitive strain sensing

Effect of the Thickness of the Strained Si on Hall Mobility

Crystal Symmetry-Dependent In-Plane Hall Effect

Effects of Strain on Electronic and Optic Properties of Holey Two-Dimensional C2N Crystals

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Theory of the anisotropy of the electron Hall mobility in n-type 4H– and 6H–SiC

High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition

Effect of crystal orientation on the implant profile and resistance of SiC