Abstract:This paper investigates for the first time the piezojunction effect in heterojunctions under external bias for ultrasensitive strain sensing. As a proof of concept, we used sensing devices made of 3C-SiC/Si heterostructure with vertically aligned electrodes. Applying the beam bending method to characterize the sensing effect, the bending strain was introduced along the typical orientation [100] or [110] on (100) Si plane. Experimental results show a linear relationship between the relative change in the forward current and the applied strain from 0 to 500 ppm, decreasing under the tensile strain while increasing under the compressive strain. At the forward bias of 8 V, the obtained gauge factors ( GFs) are 199.7 for [100] orientation and 173.1 for [110] orientation, which significantly enhance about 630 % and 540 % compared to the highest GF of n-type 3C-SiC in the literature. Interestingly, the GFs of the n + -3C-SiC/p-Si heterostructure are positive in contrast to the negative GFs of n-3C-SiC thin films. The results were explained by the strain modulation on the band split and electron mass shift along the out-of-plane direction as well as by the change in the barrier height, depletion region width, and carrier concentrations under the forward bias. The ultrasensitive piezojunction effect in the 3C-SiC/Si heterojunction demonstrated in this study can pave the way toward developing ultrasensitive mechanical sensors.

Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress

in p-type 3 C – SiC four-terminal devices under mechanical stress †

Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices

Pseudo-Hall Effect in Single Crystal N-Type 3C-Sic(100) Thin Film

Mechanical Strain Altered Gate and Substrate Currents in N and P-Channel MOSFETs

Piezojunction effect in heterojunctions under external bias for ultrasensitive strain sensing

Utilizing Large Hall Offset Voltage for Conversion Free 4H-Sic Strain Sensor

Strain effect in highly-doped n-type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement

Experimental Investigation of Piezoresistive Effect in P-Type 4H–sic

Influence of mechanical stress on the offset voltage of Hall devices operated with spinning current method

Drift of sensitive direction of Hall-effect devices in (100)-silicon caused by mechanical shear stress

- type 4 H-SiC van der Pauw sensor

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Highly sensitive p-type 4H-SiC van der Pauw sensor

An Analytical Theory of Piezoresistive Effects in Hall Plates with Large Contacts

Comparative Study on Strain Induced Electrical Properties Modulation of Si P-N Junctions

The Effect of Shear-Stress on the Piezoresistance of Silicon

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface

Correction: the Effect of Device Geometry and Crystal Orientation on the Stress-Dependent Offset Voltage of 3c–sic(100) Four Terminal Devices

Strain-induced I-V characteristics modulation of p-n junctions and MOS capacitors in Si CMOS devices

Influence on Curvature Induced Stress to the Flatband Voltage and Interface Density of 4H-Sic MOS Structure