Abstract:Graphene Hall elements (GHEs) have been demonstrated to be promising magnetic field sensors with excellent sensitivity, linearity, temperature stability, and compatibility with complementary-metal-oxide-semiconductor (CMOS)-integrated circuits (ICs). However, the demonstrated GHEs have still not exhibited a comprehensive advantage in performance over commercial integrated Hall sensors which were implemented in integrated Hall element and CMOS processing ICs. In this work, we develop a technology for the three-dimensional (3D) heterogeneous integration of silicon-based CMOS ICs and GHEs, and the fabricated magnetic field sensors outperform commercial high-end integrated Hall sensors. Specifically, the integrated Hall sensors are implemented in a stacked integration on Si based on a chopper programmable-gain amplifier (CPGA), a chopper-stabilized second-order sigma-delta modulator (CSDM), and graphene-based Hall elements on monochips. GHEs with high sensitivity (up to 1000 A/VT) are fabricated with a compatible process on a smoothened silicon nitride passivation layer of silicon-based CMOS ICs, and the two device layers are connected by an interlayer. The heterogeneous integrated Hall ICs exhibit current and voltage magnetic sensitivities up to 64 000 A/VT and 6.12 V/VT, respectively, which are much higher than those in all other reported nanomaterial-based Hall sensors and even in high-end commercial Hall ICs. Furthermore, the 3D heterogeneous integration technology used here can be extended as a universal technology for integrating nanomaterial-based sensors and Si CMOS ICs.

Drift of sensitive direction of Hall-effect devices in (100)-silicon caused by mechanical shear stress

An Analytical Theory of Piezoresistive Effects in Hall Plates with Large Contacts

Influence of mechanical stress on the offset voltage of Hall devices operated with spinning current method

Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress

in p-type 3 C – SiC four-terminal devices under mechanical stress †

Modeling of Three-Axis Hall Effect Sensor Based on CMOS Process

Inverted Pyramid 3-axis Silicon Hall Effect Magnetic Sensor With Offset Cancellation

Effects of Hall Output Probes Shape on Magnetic Characterization of Hall Magnetic Field Sensor Based on MOSFET

Oscillatory Hall effect from magnetoelectronic coupling in flexoelectronic silicon

Influence of the Hall-bar geometry on harmonic Hall voltage measurements of spin-orbit torques

The Effect of Shear-Stress on the Piezoresistance of Silicon

Method for simultaneously reducing the misalignment offset and separating the Hall voltage from the off‐diagonal piezoresistive voltage in Hall effect and piezoresistive devices based on silicon

Anomalous Hall effect from nonlinear magnetoelectric coupling

An ideal candidate for observing anomalous Hall effect induced by the in-plane magnetic field

A novel planar 3D magnetic position measurement methodology using linear Hall sensors

Ultrasensitive Magnetic Sensors Enabled by Heterogeneous Integration of Graphene Hall Elements and Silicon Processing Circuits.

Suppression of skyrmion Hall effect via standing surface acoustic waves in hybrid ferroelectric/ferromagnetic heterostructures

Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices

Towards Bendable CMOS Magnetic Sensors

Eigenvalues of strictly regular Hall-plates

Influence of the Accelerated Aging Process on the Main Characteristics of Hall Sensors