Abstract:Wide bandgap semiconductors show superior material properties enabling silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) present good features on its switching speed and withstand voltage. However, the high voltage and fast switching characteristics of SiC MOSFETs also put forward new requirements for voltage measurement, that is, high bandwidth under high voltage conditions. This article proposes a new voltage divider structure and a proactive parameter design compensation network to build high voltage and high bandwidth voltage sensing circuit. This structure utilizes the characteristics that the same resistor has the same parasitic capacitance to meet the high frequency constraints of the voltage sensing circuit. The influence of parasitic parameters and load parameters on circuit performance is analyzed in detail, which provides a basis for the compensation network design. By combining the proposed voltage sensing circuit with an appropriate proactive parameter design load effect compensation network (PDCN), the withstand voltage rating of the low-voltage and high-bandwidth voltage probes can be extended to required levels. Different from other existing methods, PDCN can actively design the compensation circuit parameters and provide the optimal parameters of the compensation circuit. This lead to a smaller input capacitance than the state of the art commercial voltage probes, which will help to obtain better performance when measuring high-speed switching voltage. The performance of the voltage measurement is experimentally verified and compared by SiC-based double pulse test (DPT) circuits.

Utilizing Large Hall Offset Voltage for Conversion Free 4H-Sic Strain Sensor

- type 4 H-SiC van der Pauw sensor

Highly sensitive p-type 4H-SiC van der Pauw sensor

in p-type 3 C – SiC four-terminal devices under mechanical stress †

Thin Layer Soi-Fets Used for Stress-Sensing and Its Application in Accelerometers

Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress

A Low-Cost High-Performance Voltage Sensing Circuit with Proactive Parameter Design Compensation Network for SiC MOSFETs.

A Novel Semiconductor Piezoresistive Thin-film Strain Gauge with High-sensitivity

Strain effect in highly-doped n-type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement

An Optoelectronic Oscillator‐based Strain Sensor with Extended Measurement Range

Piezojunction effect in heterojunctions under external bias for ultrasensitive strain sensing

Vertical Piezo-Optoelectronic Coupling in a 3C-SiC/Si Heterostructure for Self-Powered and Highly Sensitive Mechanical Sensing

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

Pseudo-Hall Effect in Single Crystal N-Type 3C-Sic(100) Thin Film

Experimental Investigation of Piezoresistive Effect in P-Type 4H–sic

Highly sensitive strain sensors based on piezotronic tunneling junction

A highly sensitive CMOS digital Hall sensor for low magnetic field applications

Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices

A high-temperature silicon-on-insulator stress sensor

Strain Effect on the Field-Effect Sensing Property of Si Wires

The Investigation of a Novel Large-Strain Sensor Based on a Dual Capacitive Structure