Abstract:Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with reduced hyperfine or charge noise sensitivity, the latter ultimately limits coherence, underlining the importance of understanding and reducing charge noise at its source. In this work, we study the voltage-induced hysteresis commonly observed in SiGe-based quantum devices and show that the dominant charge fluctuators are localized at the semiconductor-oxide interface. By applying increasingly negative gate voltages to Hall bar and quantum dot devices, we investigate how the hysteretic filling of interface traps impacts transport metrics and charge noise. We find that the gate-induced accumulation and trapping of charge at the SiGe-oxide interface leads to an increased electrostatic disorder, as probed by transport measurements, as well as the activation of low-frequency relaxation dynamics, resulting in slow drifts and increased charge noise levels. Our results highlight the importance of a conservative device tuning strategy and reveal the critical role of the semiconductor-oxide interface in SiGe heterostructures for spin qubit applications.

Simulation of spin-polarized transport in SiGe/Ge/SiGe geterostructure

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Modeling of Gate-Induced Spin Precession in a Ge 2DHG Channel

Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures

Why Experiments Fail to Detect the Finite Linear Rashba Spin-Orbit Coupling of Two-Dimensional Holes in Semiconductor Quantum Wells: the Case of Ge/SiGe Quantum Wells

Monte Carlo simulations of spin transport in nanoscale In$_{0.7}$Ga$_{0.3}$As transistors: Temperature and size effects

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits

Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits

Spin transport study in a Rashba spin-orbit coupling system

Monte Carlo Simulation of In-Plane Spin-Polarized Transport in GaAs/GaAlAs Quantum Well in the Three-Subband Approximation

Simulation of Spin-polarized Transport in GaAs/GaAIAs Quantum Well Considering Intersubband Scattering by the Monte Carlo Method

Strong and tunable spin--orbit coupling of one-dimensional holes in Ge/Si core/shell nanowires.

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

Dresselhaus spin-orbit coupling induced electron-spin polarization in a 3-layered semiconductor heterostructure

Hanle-Effect Measurements of Spin Injection from Mn5ge3c0.8/Al2o3-Contacts into Degenerately Doped Ge Channels on Si

Study of carrier transport through GexSi1−x/Si heterojunctions by using 2D Monte Carlo simulation method

Simulation of band-to-band tunneling in Si/Ge and Si/Si 1-xGex heterojunctions by using Monte Carlo method

Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method