Abstract:This special issue on Advances in Quantum Transport covers important contributions from researchers in the field of electron transport in condensed matter systems. We are in the second generation of quantum revolution where the fundamental aspects of quantum physics in semiconductors can be exploited for technological applications. This has stimulated extensive research activities in solid state quantum devices in search of new schemes which are now more accessible than before due to technological advancement in semiconductor processing as well as in the growth of high quality materials. New quantum features are being investigated in semiconductors in two, one and zero dimensions to unravel existing theoretical predictions as well as finding new effects. In this special issue we have attempted to cover some of the recent advances in quantum transport in low dimensional semiconductors and related fields. Gul et al showed the first observation of fractional quantisation of differential conductance in germanium based quantum wires in one-dimension without any quantising magnetic field. They showed that hole transport in one-dimensional (1D) quantum wires in strained germanium grown by reduced pressure chemical vapour deposition exhibited quantised conductance with plateaus at n 2 e 2 / h , where n is an integer, e is the fundamental unit of charge and h is Planck's constant. At lower carrier concentration of holes, the authors found to their surprise a plateau at 1/4(2 e 2 / h ) reduced to a spin polarised plateau at 1/8(2 e 2 / h ) in the presence of a strong parallel magnetic field. This unexpected result indicates that the system is possibly behaving as if charge was fractionalised with values e /2 and e /4 [ 1 ]. Exploiting 1D quantum wires based on GaAs, Yan et al showed how transverse electron focusing can be used for controlled monitoring of spin polarization within the 1D channel. The authors proved experimentally an existing theoretical proposal of length dependent spin polarisation in 1D quantum wires via transverse electron focusing. The polarized 1D electrons when injected into a 2D region result in a split in the odd-focusing peaks, whereas the even peaks remain single peak in comparison to unpolarised electrons where both odd and even peaks are single peaks; each sub-peak represents the population of a spin state. The authors argue that the spin orbit interactions in the 2D regime is enhanced as a consequence of injection of polarised 1D electrons, therefore, the scheme may open up a new regime of spin-engineering for possible spintronics applications [ 2 ]. Low-dimensional semiconductors with a control on spin degree of freedom are promising for spintronics devices. Motivated by this, Karlsson et al performed simulations of electronic states and effects of lateral spin–orbit coupling (LSOC) in an asymmetrically biased 1D nanowire with Dirac short-range interactions. Karlsson et al found the appearance of spin polarization at finite source-drain bias. They suggested electrons under the finite bias arrange themselves spontaneously into spin rows in the wire due to electron interactions leading to a finite spin polarization. Karlsson et al concluded that the orientation of the spin rows or polarization is LSOC dependent under finite source-drain bias. Their theoretical work of bias dependent spin polarization would be of interest to those working in spin physics [ 3 ]. Materials with large SO such as InGaAs are promising due to their potential for spintronics. However, high quality growth of these materials in comparison to GaAs still remains challenging. Gul et al have investigated quantum transport properties of molecular beam epitaxy grown In 0.75 Ga 0.25 As 1D channel realised using split gate devices. They observed ballistic transport characteristics with clear quantised conductance plateaus up to 6(2 e 2 / h ) at a measurement temperature of 50 mK and performed dc source-drain bias subband spectroscopy. They noted that for asymmetric gate biasing, a lateral spin–orbit coupling effect was weak, and the measured g -factor in the 1D channel was ~6.5 in the lowest subband [ 4 ]. Manipulating spins in a 0D system for quantum computing application, Milivojević theoretically analysed spin–orbit interaction in triple quantum dots as a source of spin–orbit leakage from the qubit space. In quantum computation schemes which are exchange driven, spin–orbit interaction is an undesired effect. The author has also analysed CNOT gates and suggested a scheme for the minimisation of leakage in cases where interacting -Abstract Truncated-

Monte Carlo Simulation of In-Plane Spin-Polarized Transport in GaAs/GaAlAs Quantum Well in the Three-Subband Approximation

Simulation of Spin-polarized Transport in GaAs/GaAIAs Quantum Well Considering Intersubband Scattering by the Monte Carlo Method

Monte Carlo simulations of spin transport in nanoscale In$_{0.7}$Ga$_{0.3}$As transistors: Temperature and size effects

Electron Scattering in GaAs/InGaAs Quantum Wells Subjected to an In-Plane Magnetic Field

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Gate Voltage and Structure Parameter Modulated Spin Splitting in AlGaN/GaN Quantum Wells

Spin Splitting of Conduction Subbands in Al0.3ga0.7as/Gaas/Alxga1-X As/Al0.3ga0.7as Step Quantum Wells

Monte Carlo Simulations of Spin Transport in a Strained Nanoscale InGaAs Field Effect Transistor

Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

Simulation of spin-polarized transport in SiGe/Ge/SiGe geterostructure

A Modelling study of Electron transport in GaN/AlGaN superlattices using Monte Carlo simulation

The In-Plane Anisotropy of the Effective G Factors in Al0.25Ga0.75N/GaN Based Quantum Point Contacts with Narrow Channels

Anti-weak Localization of the Two Dimensional Electron Gas in Modulation-Doped Al/sub X/ga/sub 1-X/n/gan Single Quantum Well

Anti-weak localization of the two dimensional electron gas in modulation-doped AlxGa1-xN/GaN single quantum well

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Magneto-transport characteristics of two-dimensional electron gas for Si δ -doped InAlAs/InGaAs single quantum well

Weak Antilocalization and Beating Pattern in High Electron Mobility AlxGa1−xN/GaN Two-Dimensional Electron Gas with Strong Rashba Spin-Orbit Coupling

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

Special issue on advances in quantum transport