Abstract:Spin-based metal-oxide-semiconductor field-effect transistors (MOSFET) with a high-mobility III-V channel are studied using self-consistent quantum corrected ensemble Monte Carlo device simulations of charge and spin transport. The simulations including spin-orbit coupling mechanisms (Dresselhaus and Rashba coupling) examine the electron spin transport in the 25 nm gate length In$_{0.7}$Ga$_{0.3}$As MOSFET. The transistor lateral dimensions (the gate length, the source-to-gate, and the gate-to-drain spacers) are increased to investigate the spin-dependent drain current modulation induced by the gate from room temperature of 300 K down to 77 K. This modulation increases with increasing temperature due to increased Rashba coupling. Finally, an increase of up to 20 nm in the gate length, source-to-gate, or the gate-to-drain spacers increases the spin polarization and enhances the spin-dependent drain current modulation at the drain due to polarization-refocusing effects.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in nano - scale In0.7Ga0.3As metal - oxide - semiconductor field - effect transistors (MOSFETs), study the electron spin - transport characteristics and their influence by temperature and device size. Specifically, through the self - consistent quantum - corrected ensemble Monte Carlo (MC) simulation method, the author explored the influence of the spin - orbit coupling mechanisms (Dresselhaus and Rashba couplings) on electron spin - transport in 25 - nm - gate - length In0.7Ga0.3As MOSFETs, and analyzed the changes in spin - dependent drain - current modulation at different temperatures (from 300 K to 77 K) and when changing the lateral device dimensions (such as gate length, source - to - gate and gate - to - drain spacings).
### Research Background
Traditional charge - based logic operations have problems such as high power consumption and limited performance improvement. Spin - based field - effect transistors (spinFETs), due to their potential advantages, such as higher operation speed, lower power consumption, and smaller short - channel effects, have become an important candidate for future high - performance digital computing and storage technologies. However, spin dephasing is one of the key factors limiting the performance of spinFETs, so it is necessary to conduct in - depth research on how to optimize spin - transport characteristics.
### Main Problems
1. **Influence of Temperature on Spin - Transport**:
- Study the changes in spin polarization and spin angle at different temperatures, especially under low - temperature conditions.
- Explore the influence of temperature changes on the strength of Rashba and Dresselhaus couplings, which in turn affects spin polarization and spin - rotation angles.
2. **Influence of Device Size on Spin - Transport**:
- By changing the gate length, source - to - gate and gate - to - drain spacings, study the influence of these geometric parameters on spin - dependent drain - current modulation.
- Pay special attention to whether increasing these sizes can improve the degree of spin polarization and enhance the effect of spin - dependent drain - current modulation.
### Formula Explanation
The formulas involved in the paper include:
- Definition of spin modulation \( V_S \):
\[
V_S(M_D, \theta) = \frac{M_D}{M_D + 1} (1 - \cos\theta)
\]
where \( M_D = |S_{\text{drain}}| \) is the magnitude of the polarization vector at the drain edge, and \( \theta \) is the angle between the drain polarization vector and the injection state.
- Temperature - dependent band - gap energy relationship:
\[
E_g(T_L) = E_{g0} - \alpha_B \left( \frac{\theta / T_L}{\exp(\theta / T_L) - 1} \right)
\]
where \( T_L \) is the lattice temperature, and \( E_{g0} \), \( \alpha_B \) and \( \theta \) are parameters obtained by fitting experimental data.
### Conclusion
The research shows that as the temperature increases, due to the enhancement of Rashba coupling, the spin modulation actually increases. In addition, increasing the gate length and spacing length (within the nano - scale) can improve the spin polarization degree at the drain edge through the spin - refocusing effect. These findings provide a theoretical basis for designing optimized spinFETs and are helpful for developing new spintronics applications.
Through the research of these problems, the paper aims to provide guidance for future spin - based transistor design, especially in optimizing spin - transport characteristics and control mechanisms.