Abstract:The transverse magnetoconductivity ${\ensuremath{\sigma}}_{\mathrm{xx}}$ of a two-dimensional electron gas (2D EG) in selectively doped ${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As/ ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{In}}_{\mathrm{x}}$As/GaAs pseudomorphic structures is shown to behave very differently from that of the ${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As/GaAs structures in the quantum Hall regime. Well-defined peaks of transverse conductivity ${\ensuremath{\sigma}}_{\mathrm{xx}}$ corresponding to each Landau level were observed and their peak heights increased with the increase of InAs composition. Also, the peak height of ${\ensuremath{\sigma}}_{\mathrm{xx}}$ increases with the Landau number N in the pseudomorphic structure, especially for samples with x\ensuremath{\ge}0.13 ${\ensuremath{\sigma}}_{\mathrm{xx}}$ varies in proportional to N+(1/2, whereas it remains almost unchanged when N increased in the ${\mathrm{Al}}_{\mathrm{y}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{y}}$As/GaAs structures. The behavior of ${\ensuremath{\sigma}}_{\mathrm{xx}}$ for the pseudomorphic structure is very similar to that of the 2D EG formed in the inversion layer of the Si metal-oxide-semiconductor field-effect transistor. The observed difference between the pseudomorphic structure and the ${\mathrm{Al}}_{\mathrm{y}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{y}}$As/GaAs heterostructure is interpreted in terms of the change in the dominant scattering mechanism, i.e., the short-range cluster scattering in the former, and the long-range scattering in the latter.

Magneto-transport characteristics of two-dimensional electron gas for Si δ -doped InAlAs/InGaAs single quantum well

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

Magnetotransport investigation of modulation-doped AlxGa1-xN/GaN heterostructures

Magnetoresistance Oscillations Induced by Intersubband Scattering of Two-Dimensional Electron Gas in Al0.22ga0.78n/Gan Heterostructures

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Magnetoconductivity of a two-dimensional electron gas in Al0.3Ga0.7As/Ga1−xInxAs/GaAs pseudomorphic heterostructures in the quantum hall regime

Weak Localization and Magnetointersubband Scattering Effects in an Alxga1-Xn/Gan Two-Dimensional Electron Gas

Occupation of the Double Subbands by the Two-Dimensional Electron Gas in the Triangular Quantum Well at Al X Ga 1 − X N / G a N Heterostructures

Magnetointersubband Oscillations of the Two-Dimensional Electron Gas in Al<sub><i>x</i></sub>Ga<sub>1 <i>x</i></sub>N/GaN Heterostructures

Magnetointersubband scattering oscillations of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Magnetotransport Properties of the Two-Dimensional Electron Gas in AlxGa1-xN/GaN Heterostructures under Illumination

Magnetotransport properties of two-dimensional electron gas in AlxGa(1-x)N/GaN heterostructures

Magnetointersubband Oscillations Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Quantum Transport in a Compensated Semimetal W2As3 with Nontrivial Z2 Indices

High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells

Weak Anti-Localization of the Two-Dimensional Electron Gas in Modulation-Doped AlxGa1−xN∕GaN Heterostructures with Two Subbands Occupation

Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure

Electron Scattering in GaAs/InGaAs Quantum Wells Subjected to an In-Plane Magnetic Field