Abstract:Magnetotransport study has been performed on AlxGa1-xN/GaN heterostructures at low temperatures and high magnetic fields. The magneto-intersubband scattering effect of the two-dimensional electron gas (2DEG) has been observed in the triangular quantum well at the heterointerface. It is found that the effective mass of the 2DEG have strong dependence on the magnetic field and the 2DEG density due to the conduction band nonparabolicity in GaN. The zero-field spin splitting of the 2DEG in AlxGa1-xN/GaN heterostructures has been studied. The obtained zero-field spin splitting energy is 2.5 meV, and the obtained spin-obit coupling parameter is 2.2×10-12 eVm. Meanwhile, the circular photo-galvanic effect induced by the spin-orbit interactions of the 2DEG in AlxGa1-xN/GaN heterostructures has also been investigated. The ratio of bulk inversion asymmetry and structure inversion asymmetry (SIA) terms is estimated to be about 13.2, indicating that the SIA is the dominant mechanism to induce the k-linear spin splitting of the subbands in the triangular quantum well at AlxGa1-xN/GaN heterointerfaces.

Weak Antilocalization and Beating Pattern in High Electron Mobility AlxGa1−xN/GaN Two-Dimensional Electron Gas with Strong Rashba Spin-Orbit Coupling

Influence of the Illumination on Weak Antilocalization in an AlxGa1−xN∕GaN Heterostructure with Strong Spin-Orbit Coupling

The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Weak Anti-Localization of the Two-Dimensional Electron Gas in Modulation-Doped AlxGa1−xN∕GaN Heterostructures with Two Subbands Occupation

Zeeman Spin Splitting of 2DEG in Al_xGa_(1-x)N/GaN Heterostructures

Weak Localization and Magnetointersubband Scattering Effects in an Alxga1-Xn/Gan Two-Dimensional Electron Gas

Anti-weak localization of the two dimensional electron gas in modulation-doped AlxGa1-xN/GaN single quantum well

Oscillations of low-field magnetoresistivity of two-dimensional electron gases in Al 0.22Ga 0.78N/GaN heterostructures in a weak localization region

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Anti-weak Localization of the Two Dimensional Electron Gas in Modulation-Doped Al/sub X/ga/sub 1-X/n/gan Single Quantum Well

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

Beating Patterns in the Oscillatory Magnetoresistance Originatedfrom Zero-Field Spin Splitting in AlxGa1−xN∕GaN Heterostructures

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Abnormal Shubnikov-De Haas Oscillations of the Two-Dimensional Electron Gas in Alxga1-Xn/Gan Heterostructures in Tilted Magnetic Fields

Oscillatory Magnetoresistance of the Two-dimensional Electron Gas in Al[sub X]ga[sub 1−x]n∕gan Heterostructures in Tilted Magnetic Fields

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Magnetotransport Properties of the Two-Dimensional Electron Gas in AlxGa1-xN/GaN Heterostructures under Illumination

Influence of the Illumination on the Beating Patterns in the Oscillatory Magnetoresistance in Alxga1-Xn/Gan Heterostructures

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures