Abstract:SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. We demonstrate a technique to reconstruct 3D interfacial atomic structure spanning multiqubit areas by combining data from two verifiably atomic-resolution microscopy techniques. Utilizing scanning tunneling microscopy (STM) to track molecular beam epitaxy (MBE) growth, we image surface atomic structure following deposition of each heterostructure layer revealing nanosized SiGe undulations, disordered strained-Si atomic steps, and nonconformal uncorrelated roughness between interfaces. Since phenomena such as atomic intermixing during subsequent overgrowth inevitably modify interfaces, we measure post-growth structure via cross-sectional high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). Features such as nanosized roughness remain intact, but atomic step structure is indiscernible in $1.0\pm 0.4$~nm-wide intermixing at interfaces. Convolving STM and HAADF-STEM data yields 3D structures capturing interface roughness and intermixing. We utilize the structures in an atomistic multivalley effective mass theory to quantify qubit spectral variability. The results indicate (1) appreciable valley splitting (VS) variability of roughly $\pm$ $50\%$ owing to alloy disorder, and (2) roughness-induced double-dot detuning bias energy variability of order $1-10$ meV depending on well thickness. For measured intermixing, atomic steps have negligible influence on VS, and uncorrelated roughness causes spatially fluctuating energy biases in double-dot detunings potentially incorrectly attributed to charge disorder.

Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures

Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Dangling bonds as possible contributors to charge noise in silicon and silicon-germanium quantum dot qubits

Impact of surface treatments on the transport properties of germanium 2DHGs

The Effect of Surface Conductance on Lateral Gated Quantum Devices in Si/Sige Heterostructures

Exploiting epitaxial strained germanium for scaling low noise spin qubits at the micron-scale

Mitigating variability in epitaxial-heterostructure-based spin-qubit devices by optimizing gate layout

Undoped accumulation-mode Si/SiGe quantum dots

Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure

Reducing disorder in Ge quantum wells by using thick SiGe barriers

Dephasing of Si spin qubits due to charge noise

Effect of SiGe-Composite Placement on Quantum Effects of a Nanowire FET Using NEGF

Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology

Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

Reducing charge noise in quantum dots by using thin silicon quantum wells

Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot

Quantum Transport Quality of a Processed Undoped Ge/SiGe Heterostructure

Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability