Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis

Xiangchao Zhang,Yong‐yuan Zhu,Hao Zhang,G. Ni,Xiao-Ying He,Heyuan Zhu,Yuanfeng Xu,Zeyu Ning,H. Shao,Bo Peng
DOI: https://doi.org/10.1039/C7RA06903K
2017-09-22
Abstract:Monolayer pentagonal silicon dicarbide is a 2D material composed entirely of pentagons, and it possesses novel electronic properties possibly leading to many potential applications. In this paper, using first-principles calculations, we have systematically investigated the electronic, mechanical and transport properties of monolayer penta-SiC2 by strain-engineering. By applying in-plane tensile or compressive strain, it is possible to modulate the physical properties of monolayer penta-SiC2, which subsequently changes the transport behaviour of the carriers. More interestingly, at room temperature, the uniaxial compressive strain of −8% along the a-direction can enhance the hole mobility of monolayer penta-SiC2 along the b-direction by almost three orders of magnitude up to 1.14 × 106 cm2 V−1 s−1, which is much larger than that of graphene, while similar strains have little influence on the electron mobility. The ultrahigh and strain-modulated carrier mobility in monolayer penta-SiC2 may lead to many novel applications in high-performance electronic and optoelectronic devices.
Engineering,Materials Science,Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to regulate the electronic, mechanical and transport properties of two - dimensional pentagonal silicon carbide (penta - SiC₂) through strain engineering (i.e., applying in - plane uniaxial or biaxial tensile or compressive strain). Specifically, the research aims to explore how to change the band structure, effective mass and deformation potential constant of penta - SiC₂ by applying different types of strain, thereby significantly increasing its carrier mobility, especially the hole mobility along the b - direction at room temperature. ### Main research objectives: 1. **Regulating electronic properties**: Change the band structure of penta - SiC₂ by applying strain, making it transform from an indirect semiconductor to a metal or a direct semiconductor. 2. **Increasing carrier mobility**: In particular, study how to significantly increase the hole mobility of penta - SiC₂ under specific strain conditions, making it reach a level comparable to or even higher than that of graphene. 3. **Analyzing chemical bonding**: Through first - principles calculations, analyze in detail the influence of strain on the chemical bonding of penta - SiC₂ and explain the microscopic mechanism of the change in its electronic properties. ### Specific problems: - **Change in band structure**: Study the change in the band structure of penta - SiC₂ under different strain conditions, especially the position change of the valence band maximum (VBM) and the conduction band minimum (CBM). - **Change in effective mass**: Calculate the effective masses of electrons and holes in penta - SiC₂ under different strain conditions and analyze their dependence on strain. - **Change in deformation potential constant**: Calculate the deformation potential constants of electrons and holes in penta - SiC₂ under different strain conditions and explore their sensitivity to strain. - **Improvement in carrier mobility**: Through the changes in the above parameters, predict and verify the significant improvement in the carrier mobility of penta - SiC₂ under specific strain conditions. ### Research background: Two - dimensional materials have broad application prospects in nanotechnology and microelectronic devices due to their unique physical and chemical properties. As a new type of two - dimensional material, penta - SiC₂ is composed of a pentagonal structure and has potentially high carrier mobility and excellent mechanical stability. However, strain is often introduced during the experimental preparation process, resulting in changes in material properties. Therefore, studying the influence of strain on the properties of penta - SiC₂ through theoretical calculations is of great significance for optimizing its performance and developing new applications. ### Conclusion: Through strain engineering, the hole mobility of penta - SiC₂ can be significantly increased. In particular, the hole mobility along the b - direction at room temperature can be increased by three orders of magnitude, reaching 1.14 × 10⁶ cm²V⁻¹s⁻¹, which is much higher than that of graphene. This finding provides new ideas for the design of high - performance electronic and optoelectronic devices.